BT137B-800G /T3 NXP Semiconductors, BT137B-800G /T3 Datasheet - Page 5

• Manufacturer Part Number: BT137B-800G /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT137B-800G /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 71 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 40 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT137B-800G,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT137B-800G
Product data sheet
Symbol
R
R
Fig 5.
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
I
TSM
(A)
10
10
80
60
40
20
10
-1
-2
0
1
10
values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
Transient thermal impedance from junction to mounting base as a function of pulse width
1
-5
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
-4
10
Conditions
half cycle; see
full cycle; see
PCB (FR4) mounted; minimum pad
sizes
All information provided in this document is subject to legal disclaimers.
unidirectional
10
-3
Rev. 4 — 29 March 2011
Figure 6
Figure 6
10
10
-2
2
bidirectional
10
-1
10
3
BT137B-800G
Min
-
-
-
number of cycles
I
1
T
T
j(init)
Typ
-
-
55
1/f
= 25 C max
t
p
© NXP B.V. 2011. All rights reserved.
(s)
003aae693
003aae698
I
Max
2.4
2
-
TSM
t
10
10
4
4Q Triac
Unit
K/W
K/W
K/W
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