2N6027 ON Semiconductor, 2N6027 Datasheet - Page 2

• Manufacturer Part Number: 2N6027
• Description: SCRs 40V 300mW PUT
• Manufacturer: ON Semiconductor

Specifications of 2N6027

• Breakover Current Ibo Max: 5 A
• Rated Repetitive Off-state Voltage Vdrm: 40 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Mounting Style: Through Hole
• Package / Case: TO-92-3 (TO-226)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*Indicates JEDEC Registered Data
1. Anode positive, R
2. E = 0.5  CV
3. Derate current and power above 25°C.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Power Dissipation*
DC Forward Anode Current*
DC Gate Current*
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
Gate to Cathode Forward Voltage*
Gate to Cathode Reverse Voltage*
Gate to Anode Reverse Voltage*
Anode to Cathode Voltage* (Note 1)
Capacitive Discharge Energy (Note 2)
Power Dissipation (Note 3)
Operating Temperature
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes
Anode negative, R
Derate Above 25°C
Derate Above 25°C
100
10
(t1/16″ from case, 10 seconds maximum)
20
m
m
m
s Pulse Width
s Pulse Width, 1% Duty Cycle*
s Pulse Width, 1% Duty Cycle
2
capacitor discharge energy limiting resistor and repetition.
GA
GA
= 1000 W
= open
(T
J
= 25°C unless otherwise noted)
Characteristic
Rating
2N6027, 2N6028
http://onsemi.com
2
Symbol
Symbol
1/q
V
V
V
T
I
R
R
I
V
T
TRM
TSM
P
P
OPR
GKF
GKR
GAR
T
T
I
I
qJC
E
stg
qJA
AK
G
T
F
D
L
J
JA
−50 to +100
−50 to +125
−55 to +150
Value
*5.0
"50
2.67
Max
300
150
±40
250
300
200
260
4.0
1.0
2.0
5.0
40
40
75
mW/°C
mA/°C
°C/W
°C/W
Unit
Unit
mW
mW
mA
mA
°C
°C
°C
°C
mJ
A
A
V
V
V
V