NESG2101M05 CEL, NESG2101M05 Datasheet
NESG2101M05
Specifications of NESG2101M05
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NESG2101M05 Summary of contents
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... Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ NEC's NPN SiGe M05 DESCRIPTION NEC's NESG2101M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators NECʼ ...
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... A UNITS RATINGS SYMBOLS V 13 j-c V 5.0 V 1.5 mA 100 ORDERING INFORMATION mW 500 PART NUMBER °C 150 NESG2101M05-T1-A °C -65 to +150 (T = 25°C) A 125 150 (°C) A 0.9 1.0 (V) BE PARAMETERS UNITS Junction to Case Resistance °C/W QUANTITY SUPPLYING FORM 3 kpcs/reel • Pin 3 (Collector), Pin 4 ...
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TYPICAL PERFORMANCE CURVES COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.1 0.01 0.001 0.0001 0.4 0.5 0.6 0.7 0.8 Base to Emitter Voltage, V COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 ...
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TYPICAL PERFORMANCE CURVES DC CURRENT GAIN vs. COLLECTOR CURRENT 1 000 100 10 0 Collector Current GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz ...
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TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 MSG 30 MAG |S21e 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY 40 35 MSG 30 MAG ...
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TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MSG MAG 21e Collector Current INSERTION ...
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TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT GHz 25 20 MSG 21e Collector Current, I INSERTION POWER GAIN, MAG, MSG ...
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TYPICAL PERFORMANCE CURVES OUTPUT POWER, POWER GAIN, COLLECTOR CUR- RENT, COLLECTOR EFFICIENCY vs. INPUT POWER 3 5.2 GHz out ...
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TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 5 ...
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TYPICAL PERFORMANCE CURVES NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2101M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.789 -60.55 0.400 0.728 -101.35 0.600 0.640 -126.85 0.800 0.625 -144.45 0.900 0.623 -151.37 1.000 0.618 -157.17 1.100 0.616 -162.79 1.200 0.615 -167.45 1.300 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 NESG2101M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.572 -113.11 0.400 0.588 -146.82 0.600 0.565 -164.47 0.800 0.571 -174.66 0.900 0.575 -178.62 1.000 0.574 177.67 1.100 0.578 174.15 1.200 0.579 171.23 1.300 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 50 -j10 -j25 -j50 NESG2101M05 FREQUENCY S 11 GHz MAG ANG 0.200 0.789 -57.89 0.400 0.726 -98.15 0.600 0.634 -123.23 0.800 0.619 -141.61 0.900 0.612 -148.55 1.000 0.607 -154.90 1.100 0.606 -160.48 1.200 0.603 -165.23 1 ...
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... CEPKG EPKG C BEPKG Emitter ADDITIONAL PARAMETERS (1) Parameters Q1 0.149 0.8 4e- 0 1.11 MODEL TEST CONDITIONS 1.3 Frequency: 5.2 Bias: Date Collecto r NESG2101M05 0.45 pF CBPKG 0.02 pF CEPKG C 0.05 pF BEPKG L 0.8 nH BPKG L 1.2 nH CPKG L 0.15 nH EPKG 0 GHz 09/2003 A Business Partner of NEC Compound Semiconductor Devices, Ltd. ...
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... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...