UH4PBCHM3/87A Vishay, UH4PBCHM3/87A Datasheet - Page 3

• Manufacturer Part Number: UH4PBCHM3/87A
• Description: DIODE 4A 100V 25NS DUAL TO277A
• Manufacturer: Vishay

Specifications of UH4PBCHM3/87A

• Voltage - Forward (vf) (max) @ If: 1.05V @ 2A
• Current - Reverse Leakage @ Vr: 5µA @ 100V
• Current - Average Rectified (io) (per Diode): 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: TO-277A (SMPC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.05 V at 2 A
• Recovery Time: 25 ns
• Forward Continuous Current: 4 A
• Max Surge Current: 40 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
Document Number: 88991
Revision: 26-Oct-10
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
(T
A
Figure 2. Forward Power Loss Characteristics Per Diode
= 25 °C unless otherwise noted)
0.01
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Figure 1. Maximum Forward Current Derating Curve
0.1
10
4
3
0
5
2
0
1
1
0.2
0
0
T
T
at the Cathode Band Terminal
0.4
A
L
25
0.4
= 125 °C
measured
Instantaneous Forward Voltage (V)
D = 0.1
Average Forward Current (A)
0.6
50
Lead Temperature (°C)
T
D = 0.2
0.4
A
Resistive or Inductive Load
0.8
= 150 °C
[e-mail], [e-mail],
75
D = 0.3
1.2
For technical questions within your region, please contact one of the following:
1.0
T
A
100
D = 0.5
= 25 °C
D = t
1.2
1.6
p
125
/T
1.4
D = 0.8
T
2.0
t
150
p
D = 1.0
1.6
175
2.4
1.8
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
UH4PBC, UH4PCC, UH4PDC
0.01
100
100
100
0.1
10
10
10
1
Figure 5. Typical Junction Capacitance Per Diode
1
0.1
0.01
10
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Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
Junction to Ambient
20
30
0.1
T
A
t - Pulse Duration (s)
Reverse Voltage (V)
40
= 150 °C
1
T
A
50
= 125 °C
T
A
1
= 25 °C
60
70
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
80
= 50 mVp-p
90
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100
100
100
3