UGB10DCTHE3/45 Vishay, UGB10DCTHE3/45 Datasheet

UGB10DCTHE3/45

Manufacturer Part Number

UGB10DCTHE3/45

Description

DIODE 10A 200V 20NS DUAL UF

Manufacturer

Vishay

Datasheet

1.BYQ28E-100-E345.pdf (5 pages)

Specifications of UGB10DCTHE3/45

Voltage - Forward (vf) (max) @ If

1.1V @ 5A

Current - Reverse Leakage @ Vr

10µA @ 200V

Current - Average Rectified (io) (per Diode)

Voltage - Dc Reverse (vr) (max)

200V

Reverse Recovery Time (trr)

25ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Product

Ultra Fast Recovery Rectifier

Configuration

Dual Common Cathode

Reverse Voltage

200 V

Forward Voltage Drop

1.25 V

Recovery Time

25 ns

Forward Continuous Current

10 A

Max Surge Current

55 A

Reverse Current Ir

10 uA

Mounting Style

SMD/SMT

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 40 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 5
Download datasheet (144Kb)

Document Number: 88549

Revision: 07-Jan-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Maximum average forward rectified current at T

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Non-repetitive peak reverse current per diode at t

Electrostatic discharge capacitor voltage,

human body model: C = 250 pF, R = 1.5 kΩ

Operating junction and storage temperature range

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

PIN 1

PIN 3

BYQ28E & UG10

TO-220AB

F(AV)

FSM

RRM

max.

PIN 2

CASE

BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT

PIN 2

PIN 1

BYQ28EB & UGB10

Dual Common Cathode Ultrafast Rectifier

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

HEATSINK

= 25 °C unless otherwise noted)

100 V, 150 V, 200 V

BYQ28EF & UGF10

PIN 1

PIN 3

0.895 V

5 A x 2

150 °C

ITO-220AB

25 ns

55 A

= 100 °C

= 100 µs

PIN 2

total device

per diode

FEATURES

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching power supplies, freewheeling diodes,

dc-to-dc converters and polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

SYMBOL

• Glass passivated chip junction

• Ultrafast recovery times

• Soft recovery characteristics

• Low switching losses, high efficiency

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB and

• Component in accordance to RoHS 2002/95/EC

, T

F(AV)

FSM

RSM

RWM

RRM

peak of 245 °C (for TO-263AB package)

ITO-220AB package)

and WEEE 2002/96/EC

STG

BYQ28E-100

Vishay General Semiconductor

UG10BCT

100

BYQ28E-150

- 40 to + 150

UG10CCT

1500

150

0.2

BYQ28E-200

UG10DCT

200

www.vishay.com

UNIT

°C

Related parts for UGB10DCTHE3/45

UGB10DCTHE3/45 Summary of contents

Page 1

... Isolation voltage (ITO-220AB only) from terminal to heatsink min Document Number: 88549 For technical questions within your region, please contact one of the following: Revision: 07-Jan-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEATURES ITO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics • ...

Page 2

... BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER Maximum instantaneous forward voltage (1) per diode Maximum reverse current per diode at working peak reverse voltage Maximum reverse recovery time per diode Maximum reverse recovery time per diode Maximum stored charge per diode Note: (1) Pulse test: 300 µ ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88549 For technical questions within your region, please contact one of the following: Revision: 07-Jan-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Vishay General Semiconductor 1000 100 10 1 0.1 150 0 Percent of Rated Peak Reverse Voltage (%) Figure 4 ...

Page 4

... BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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