FEPB6DTHE3/81 Vishay, FEPB6DTHE3/81 Datasheet

DIODE 6A 200V 35NS DUAL TO263AB

FEPB6DTHE3/81

Manufacturer Part Number
FEPB6DTHE3/81
Description
DIODE 6A 200V 35NS DUAL TO263AB
Manufacturer
Vishay
Datasheet
1.FEP6AT-E345.pdf (5 pages)

Specifications of FEPB6DTHE3/81

Voltage - Forward (vf) (max) @ If
975mV @ 3A
Current - Reverse Leakage @ Vr
5µA @ 200V
Current - Average Rectified (io) (per Diode)
6A
Voltage - Dc Reverse (vr) (max)
200V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
0.975 V at 3 A
Recovery Time
35 ns
Forward Continuous Current
6 A
Max Surge Current
75 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
FEPB6DTHE3/81
Quantity:
70 000
Document Number: 88598
Revision: 07-Nov-07
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating storage and temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
FEP6xT Series
PIN 1
PIN 3
TO-220AB
T
V
I
J
I
F(AV)
FSM
RRM
V
t
max.
rr
F
PIN 2
CASE
FEPB6xT Series
PIN 2
Dual Common-Cathode Ultrafast Rectifier
PIN 1
1
K
TO-263AB
2
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
3
For technical questions within your region, please contact one of the following:
C
1
= 25 °C unless otherwise noted)
HEATSINK
K
2
FEPF6xT Series
PIN 1
PIN 3
50 V to 200 V
ITO-220AB
0.975 V
150 °C
35 ns
6.0 A
75 A
C
= 105 °C
PIN 2
1
2
3
SYMBOL
T
J
V
V
I
I
V
F(AV)
, T
V
FSM
RRM
RMS
DC
AC
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder dip 260 °C, 40 s (for TO-220AB and
• Component in accordance to RoHS 2002/95/EC
FEP(F,B)6AT thru FEP(F,B)6DT
FEP6AT
peak of 245 °C (for TO-263AB package)
ITO-220AB package)
and WEEE 2002/96/EC
50
35
50
Vishay General Semiconductor
FEP6BT
100
100
70
- 55 to + 150
1500
6.0
75
FEP6CT
150
105
150
FEP6DT
200
140
200
www.vishay.com
UNIT
°C
V
V
V
A
A
V
1

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FEPB6DTHE3/81 Summary of contents

Page 1

... Isolation voltage (ITO-220AB only) from terminal to heatsink min Document Number: 88598 For technical questions within your region, please contact one of the following: Revision: 07-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEP(F,B)6AT thru FEP(F,B)6DT FEATURES ITO-220AB • Glass passivated chip junction • Ultrafast recovery time • ...

Page 2

... TO-263AB FEPB6DT-E3/45 TO-263AB FEPB6DT-E3/81 (1) TO-220AB FEP6DTHE3/45 (1) ITO-220AB FEPF6DTHE3/45 (1) TO-263AB FEPB6DTHE3/45 (1) TO-263AB FEPB6DTHE3/81 Note: (1) Automotive grade AEC Q101 qualified www.vishay.com For technical questions within your region, please contact one of the following: 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com = 25 °C unless otherwise noted) C TEST CONDITIONS SYMBOL FEP6AT 3 ° ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88598 For technical questions within your region, please contact one of the following: Revision: 07-Nov-07 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEP(F,B)6AT thru FEP(F,B)6DT 100 10 0.1 0.01 125 150 Figure 4. Typical Reverse Leakage Characteristics Per Diode ...

Page 4

... FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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