UGB10DCTHE3/81 Vishay, UGB10DCTHE3/81 Datasheet - Page 3

• Manufacturer Part Number: UGB10DCTHE3/81
• Description: DIODE 10A 200V 20NS DUAL UF
• Manufacturer: Vishay

Specifications of UGB10DCTHE3/81

• Voltage - Forward (vf) (max) @ If: 1.1V @ 5A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Current - Average Rectified (io) (per Diode): 5A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88549
Revision: 07-Jan-08
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
0.01
100
100
0.1
15
10
10
10
5
0
1
1
0.2
0
1
Pulse Width = 300 µs
1 % Duty Cycle
Figure 1. Forward Current Derating Curve
Resistive or Inductive Load
0.4
Instantaneous Forward Voltage (V)
T
J
Number of Cycles at 60 Hz
= 125 °C
Case Temperature (°C)
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Current Per Diode
50
0.6
T
T
8.3 ms Single Half Sine-Wave
J
[e-mail], [e-mail], [e-mail]
C
= 25 °C
For technical questions within your region, please contact one of the following:
0.8
= 105 °C
10
T
J
= 100 °C
100
1.0
1.2
150
100
1.4
1000
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
25
0.1
0
at 1 A, 100 A/µs
Vishay General Semiconductor
Percent of Rated Peak Reverse Voltage (%)
at 5 A, 50 A/µs
at 2 A, 20 A/µs
20
at 2 A, 20 A/µs
50
Junction Temperature (°C)
Reverse Voltage (V)
1
40
T
J
at 5 A, 50 A/µs
= 125 °C
T
J
at 1 A, 100 A/µs
75
T
= 100 °C
J
= 25 °C
60
10
T
f = 1.0 MHz
V
J
100
sig
= 125 °C
= 50 mVp-p
80
www.vishay.com
t
Q
rr
rr
100
125
100
3