UGB18ACTHE3/45 Vishay, UGB18ACTHE3/45 Datasheet - Page 3

• Manufacturer Part Number: UGB18ACTHE3/45
• Description: DIODE 18A 50V 20NS DUAL UF
• Manufacturer: Vishay

Specifications of UGB18ACTHE3/45

• Voltage - Forward (vf) (max) @ If: 1.1V @ 9A
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Current - Average Rectified (io) (per Diode): 18A
• Voltage - Dc Reverse (vr) (max): 50V
• Reverse Recovery Time (trr): 30ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88759
Revision: 09-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
A
= 25 °C unless otherwise noted)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
1000
0.01
100
100
0.1
24
20
16
12
10
10
8
4
0
1
0.4
0
1
Figure 1. Forward Current Derating Curve
25
0.6
Instantaneous Forward Voltage (V)
Number of Cycles at 60 Hz
50
Case Temperature (°C)
Current Per Diode
0.8
75
T
8.3 ms Single Half Sine-Wave
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C
For technical questions within your region, please contact one of the following:
1.0
= 105 °C
10
Resistive or Inductive Load
100
T
Pulse Width = 300 µs
1 % Duty Cycle
J
= 25 °C
1.2
125
1.4
150
175
100
1.6
UG(F,B)18ACT thru UG(F,B)18DCT
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1000
0.01
Figure 5. Reverse Switching Characteristics Per Diode
100
100
0.1
10
10
60
50
40
30
20
10
0
1
1
Figure 6. Typical Junction Capacitance Per Diode
0.1
0
0
I
V
Vishay General Semiconductor
F
R
Percent of Rated Peak Reverse Voltage (%)
= 9.0 A
= 30 V
25
20
T
J
Junction Temperature (°C)
T
= 25 °C
T
dI/dt =
J
50
J
= 100 °C
= 125 °C
Reverse Voltage (V)
1
40
75
100
60
150 A/µs
10
125
T
f = 1.0 MHz
V
J
100 A/µs
sig
= 125 °C
150 A/µs
20 A/µs
20 A/µs
100 A/µs
50 A/µs
50 A/µs
= 50 mVp-p
80
150
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t
Q
rr
rr
175
100
100
3