MBRB15H60CT-E3/45 Vishay, MBRB15H60CT-E3/45 Datasheet

MBRB15H60CT-E3/45

Manufacturer Part Number

MBRB15H60CT-E3/45

Description

DIODE SCHOTTKY 15A 60V DUAL

Manufacturer

Vishay

Datasheet

1.MBR15H45CT-E345.pdf (5 pages)

Specifications of MBRB15H60CT-E3/45

Voltage - Forward (vf) (max) @ If

730mV @ 7.5A

Current - Reverse Leakage @ Vr

50µA @ 60V

Current - Average Rectified (io) (per Diode)

7.5A

Voltage - Dc Reverse (vr) (max)

60V

Diode Type

Schottky

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Product

Schottky Diodes

Peak Reverse Voltage

60 V

Forward Continuous Current

15 A

Max Surge Current

150 A

Configuration

Dual Common Cathode

Forward Voltage Drop

0.87 V

Maximum Reverse Leakage Current

50 uA

Operating Temperature Range

- 65 C to + 175 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Document Number: 88782

Revision: 19-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Working peak reverse voltage

Maximum DC blocking voltage

Max. average forward rectified current

(Fig. 1)

Non-repetitive avalanche energy per diode

at 25 °C, I

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Peak repetitive reverse surge current per diode

at t

Peak non-repetitive reverse energy

(8/20 µs waveform)

= 2.0 µs, 1 kHz

MBR15HxxCT

PIN 1

PIN 3

TO-220AB

F(AV)

= 4 A, L = 10 mH

FSM

RRM

max.

High Barrier Technology for Improved High Temperature Performance

PIN 2

CASE

Dual Common-Cathode Schottky Rectifier

MBRB15HxxCT

PIN 2

PIN 1

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

HEATSINK

total device

per diode

MBRF15HxxCT

PIN 1

PIN 3

0.55 V, 0.61 V

35 V to 60 V

ITO-220AB

7.5 A x 2

175 °C

150 A

50 µA

MBR(F,B)15H35CT thru MBR(F,B)15H60CT

PIN 2

SYMBOL MBR15H35CT MBR15H45CT MBR15H50CT MBR15H60CT UNIT

F(AV)

RRM

RWM

FSM

RRM

RSM

FEATURES

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB and

• Component in accordance to RoHS 2002/95/EC

peak of 245 °C (for TO-263AB package)

ITO-220AB package)

and WEEE 2002/96/EC

1.0

Vishay General Semiconductor

150

7.5

0.5

www.vishay.com

Related parts for MBRB15H60CT-E3/45

MBRB15H60CT-E3/45 Summary of contents

Page 1

... Peak non-repetitive reverse energy (8/20 µs waveform) Document Number: 88782 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)15H35CT thru MBR(F,B)15H60CT FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • ...

Page 2

... MBR(F,B)15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor MAXIMUM RATINGS ( °C unless otherwise noted) C PARAMETER Electrostatic discharge capacitor voltage human body model 100 1.5 kΩ Voltage rate of change (rated Operating junction temperature range Storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink min ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88782 For technical questions within your region, please contact one of the following: Revision: 19-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com MBR(F,B)15H35CT thru MBR(F,B)15H60CT 10 MBR, MBRB 1 0.1 ...

Page 4

... MBR(F,B)15H35CT thru MBR(F,B)15H60CT Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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