BYVF32-50-E3/45 Vishay, BYVF32-50-E3/45 Datasheet

BYVF32-50-E3/45

Manufacturer Part Number

BYVF32-50-E3/45

Description

DIODE UFAST 18A 50V ITO-220AB

Manufacturer

Vishay

Datasheet

1.BYVF32-100HE345.pdf (5 pages)

Specifications of BYVF32-50-E3/45

Voltage - Forward (vf) (max) @ If

1.15V @ 20A

Current - Reverse Leakage @ Vr

10µA @ 50V

Current - Average Rectified (io) (per Diode)

18A

Voltage - Dc Reverse (vr) (max)

50V

Reverse Recovery Time (trr)

25ns

Diode Type

Standard

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Diode Configuration

1 Pair Common Cathode

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads, Isolated), ITO-220AB

Product

Ultra Fast Recovery Rectifier

Configuration

Dual Common Cathode

Reverse Voltage

50 V

Forward Voltage Drop

1.15 V at 20 A

Recovery Time

25 ns

Forward Continuous Current

18 A

Max Surge Current

150 A

Reverse Current Ir

10 uA

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 65 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current page: 1 of 5
Download datasheet (141Kb)

Document Number: 88558

Revision: 05-May-08

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current at T

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load per diode

Operating storage and temperature range

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

BYV32 Series

PIN 1

PIN 3

TO-220AB

F(AV)

FSM

RRM

max.

PIN 2

CASE

BYVB32 Series

PIN 2

PIN 1

Dual Common-Cathode Ultrafast Rectifier

TO-263AB

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

For technical questions within your region, please contact one of the following:

= 25 °C unless otherwise noted)

HEATSINK

BYVF32 Series

PIN 1

PIN 3

50 V to 200 V

ITO-220AB

150 °C

0.85 V

150 A

25 ns

18 A

= 125 °C

PIN 2

SYMBOL

F(AV)

, T

FSM

RRM

RMS

BYV(F,B)32-50 thru BYV(F,B)32-200

STG

FEATURES

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode

power supplies, inverters, freewheeling diodes,

dc-to-dc converters, and other power switching

application.

MECHANICAL DATA

Case: TO-220AB, ITO-220AB, TO-263AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

BYV32-50

• Glass passivated chip junction

• Ultrafast recovery time

• Low switching losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• Meets MSL level 1, per J-STD-020, LF maximum

• Solder dip 260 °C, 40 s (for TO-220AB and

• Component in accordance to RoHS 2002/95/EC

peak of 245 °C (for TO-263AB package)

ITO-220AB package)

and WEEE 2002/96/EC

Vishay General Semiconductor

BYV32-100

100

- 65 to + 150

1500

150

BYV32-150

150

105

150

BYV32-200

200

140

200

www.vishay.com

UNIT

°C

Related parts for BYVF32-50-E3/45

BYVF32-50-E3/45 Summary of contents

Page 1

... Low forward voltage drop • High forward surge capability 3 2 • Meets MSL level 1, per J-STD-020, LF maximum 1 peak of 245 °C (for TO-263AB package) BYVF32 Series • Solder dip 260 ° (for TO-220AB and PIN 1 PIN 2 ITO-220AB package) PIN 3 • Component in accordance to RoHS 2002/95/EC ...

Page 2

... TO-220AB BYV32-200-E3/45 ITO-220AB BYVF32-200-E3/45 TO-263AB BYVB32-200-E3/45 TO-263AB BYVB32-200-E3/81 (1) TO-220AB BYV32-200HE3/45 ITO-220AB BYVF32-200HE3/45 TO-263AB BYVB32-200HE3/45 TO-263AB BYVB32-200HE3/81 Note: (1) Automotive grade AEC Q101 qualified www.vishay.com For technical questions within your region, please contact one of the following: 2 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com = 25 °C unless otherwise noted) ...

Page 3

... Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Document Number: 88558 For technical questions within your region, please contact one of the following: Revision: 05-May-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor 1000 100 10 1 0.1 ...

Page 4

... BYV(F,B)32-50 thru BYV(F,B)32-200 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) 0.160 (4.06) 1 ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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