FEPB16JT-E3/81 Vishay, FEPB16JT-E3/81 Datasheet - Page 3

• Manufacturer Part Number: FEPB16JT-E3/81
• Description: DIODE 16A 600V 50NS DUAL
• Manufacturer: Vishay

Specifications of FEPB16JT-E3/81

• Voltage - Forward (vf) (max) @ If: 1.5V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 50ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.5 V @ 8 A
• Recovery Time: 50 ns
• Forward Continuous Current: 16 A
• Max Surge Current: 125 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88596
Revision: 07-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
300
250
200
150
100
100
0.1
20
16
12
50
10
0
8
4
0
1
0.2
0
1
T
Figure 1. Forward Current Derating Curve
J
= 125 °C
0.4
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
Case Temperature (°C)
0.8
50
Per Diode
1.0
T
8.3 ms Single Half Sine-Wave
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C
Resistive or Inductive Load
For technical questions within your region, please contact one of the following:
= 100 °C
10
1.2
Pulse Width = 300 µs
1 % Duty Cycle
100
1.4
1.6
50 - 400 V
300 - 400 V
500 - 600 V
T
J
= 25 °C
1.8
150
100
2.0
FEP(F,B)16AT thru FEP(F,B)16JT
1000
0.01
100
100
0.1
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
0
Vishay General Semiconductor
T
Percent of Rated Peak Reverse Voltage (%)
J
= 25 °C
20
50 - 400 V
500 - 600 V
50 - 400 V
500 - 600 V
Reverse Voltage (V)
1
40
60
T
10
J
T
f = 1.0 MHz
V
= 125 °C
J
sig
= 125 °C
T
= 50 mVp-p
J
80
= 100 °C
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100
100
3