MBR3045CT-E3/4W Vishay, MBR3045CT-E3/4W Datasheet - Page 3

• Manufacturer Part Number: MBR3045CT-E3/4W
• Description: DIODE SCHOT 30A 45V DUAL TO220-3
• Manufacturer: Vishay

Specifications of MBR3045CT-E3/4W

• Voltage - Forward (vf) (max) @ If: 760mV @ 30A
• Current - Reverse Leakage @ Vr: 1mA @ 45V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Product: Schottky Diodes
• Peak Reverse Voltage: 45 V
• Forward Continuous Current: 30 A
• Max Surge Current: 200 A
• Configuration: Dual Common Cathode
• Forward Voltage Drop: 0.76 V
• Maximum Reverse Leakage Current: 1000 uA
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88677
Revision: 08-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0.001
0.01
100
0.01
100
1.0
1.0
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
0
0
Percent of Rated Peak Reverse Voltage (%)
0.1
Instantaneous Forward Voltage (V)
T
0.2
20
J
= 150 °C
T
0.3
J
= 125 °C
0.4
T
40
J
= 75 °C
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T
0.5
For technical questions within your region, please contact one of the following:
T
J
J
= 25 °C
= 25 °C
0.6
60
0.7
0.8
80
0.9
1.0
100
MBR(F,B)3035CT & MBR(F,B)3045CT
10 000
Figure 5. Typical Transient Thermal Impedance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
1000
100
100
0.1
10
1
0.01
0.1
Vishay General Semiconductor
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
T
f = 1.0 MHz
V
J
sig
= 25 °C
10
= 50 mVp-p
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100
100
3