V40100G-E3/4W Vishay, V40100G-E3/4W Datasheet

no-image

V40100G-E3/4W

Manufacturer Part Number
V40100G-E3/4W
Description
DIODE 40A 100V SCHOTTKY TO220-3
Manufacturer
Vishay
Datasheet

Specifications of V40100G-E3/4W

Voltage - Forward (vf) (max) @ If
810mV @ 20A
Current - Reverse Leakage @ Vr
500µA @ 100V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Schottky Rectifiers
Peak Reverse Voltage
100 V
Forward Continuous Current
40 A
Max Surge Current
200 A
Configuration
Dual Common Cathode
Forward Voltage Drop
0.81 V at 20 A
Maximum Reverse Leakage Current
500 uA
Operating Temperature Range
- 40 C to + 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Document Number: 88970
Revision: 24-Jun-09
PRIMARY CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive avalanche energy
at T
Peak repetitive reverse current at t
T
Voltage rate of change (rated V
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Operating junction and storage temperature range
J
= 38 °C ± 2 °C per diode
J
PIN 1
PIN 2
PIN 1
PIN 3
= 25 °C, L = 90 mH per diode
K
V
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TO-220AB
TO-263AB
V40100G
VB40100G
F
at I
T
V
I
J
I
F(AV)
FSM
RRM
F
max.
= 20 A
1
HEATSINK
CASE
K
PIN 2
2
1
2
TMBS
3
PDD-Americas@vishay.com, PDD-Asia@vishay.com,
For technical questions within your region, please contact one of the following:
R
)
p
A
®
= 2 µs, 1 kHz,
= 25 °C unless otherwise noted)
K
PIN 1
PIN 3
PIN 1
PIN 3
TO-262AA
ITO-220AB
VF40100G
VI40100G
2 x 20 A
Ultra Low V
150 °C
0.67 V
100 V
200 A
V40100G, VF40100G, VB40100G & VI40100G
per device
per diode
PIN 2
PIN 2
K
1
1
New Product
2
2
SYMBOL
T
3
3
J
V
F
I
dV/dt
I
I
, T
F(AV)
E
V
RRM
FSM
RRM
AS
AC
= 0.42 V at I
STG
FEATURES
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-262AA
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
V40100G
• Trench MOS Schottky technology
• Low forward voltage drop, low power
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
• Solder bath temperature 275 °C maximum, 10 s,
• Compliant to RoHS directive 2002/95/EC and in
losses
peak of 245 °C (for TO-263AB package)
per JESD 22-B106 (for TO-220AB, ITO-220AB and
TO-262AA package)
accordance to WEEE 2002/96/EC
F
PDD-Europe@vishay.com
TO-220AB,
= 5 A
Vishay General Semiconductor
VF40100G
- 40 to + 150
10 000
1500
100
200
230
1.0
40
20
VB40100G
ITO-220AB,
VI40100G
TO-263AB
www.vishay.com
UNIT
V/µs
mJ
°C
V
A
A
A
V
and
1

Related parts for V40100G-E3/4W

V40100G-E3/4W Summary of contents

Page 1

... Operating junction and storage temperature range Document Number: 88970 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V40100G, VF40100G, VB40100G & VI40100G Ultra Low FEATURES • Trench MOS Schottky technology ITO-220AB • ...

Page 2

... Pulse test: 300 µs pulse width duty cycle Pulse test: Pulse width ≤ (2) THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N TO-220AB V40100G-E3/4W ITO-220AB VF40100G-E3/4W TO-263AB VB40100G-E3/4W TO-263AB VB40100G-E3/8W TO-262AA VI40100G-E3/4W RATINGS AND CHARACTERISTICS CURVES ( ° ...

Page 3

... Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 88970 For technical questions within your region, please contact one of the following: Revision: 24-Jun-09 PDD-Americas@vishay.com, PDD-Asia@vishay.com, New Product V40100G, VF40100G, VB40100G & VI40100G 10 1 0.1 0.8 1 0.01 Figure 6. Typical Transient Thermal Impedance 10 ...

Page 4

... V40100G, VF40100G, VB40100G & VI40100G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) MAX. 0.370 (9.40) 0.154 (3.91) 0.360 (9.14) 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) PIN 0.350 (8.89 0.330 (8.38) ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords