HFA16TA60CPBF Vishay, HFA16TA60CPBF Datasheet

DIODE HEXFRED 600V 8A TO220AB

HFA16TA60CPBF

Manufacturer Part Number
HFA16TA60CPBF
Description
DIODE HEXFRED 600V 8A TO220AB
Manufacturer
Vishay
Series
HEXFRED®r

Specifications of HFA16TA60CPBF

Diode Configuration
1 Pair Common Cathode
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.7V @ 8A
Current - Reverse Leakage @ Vr
5µA @ 600V
Current - Average Rectified (io) (per Diode)
8A (DC)
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
55ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Product
Ultra Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
600 V
Forward Voltage Drop
2.1 V
Recovery Time
55 ns
Forward Continuous Current
16 A
Max Surge Current
60 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
8A
Forward Voltage Vf Max
2.1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*HFA16TA60CPBF
VS-HFA16TA60CPBF
VS-HFA16TA60CPBF
VSHFA16TA60CPBF
VSHFA16TA60CPBF
Document Number: 94058
Revision: 09-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
Diode variation
Package
T
t
V
rr
J
I
F
F(AV)
V
(typ.)
max.
at I
R
F
Anode
1
TO-220AB
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
common
Common
cathode
cathode
Base
Ultrafast Soft Recovery Diode, 2 x 8 A
For technical questions within your region, please contact one of the following:
2
2
3
Anode
Common cathode
per device
TO-220AB
per leg
2 x 8 A
150 °C
600 V
18 ns
1.7 V
This document is subject to change without notice.
SYMBOL
T
J
HEXFRED
I
I
FSM
FRM
, T
V
P
I
F
R
D
Stg
T
T
T
C
C
C
TEST CONDITIONS
= 100 °C
= 25 °C
= 100 °C
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TA60CPbF is a state of the art center tap ultrafast
recovery
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 8 A per
leg continuous current, the VS-HFA16TA60CPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED
peak recovery current (I
tendency to “snap-off” during the t
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA16TA60CPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
®
DiodesEurope@vishay.com
diode.
RRM
®
product line features extremely low values of
and Q
Employing
VS-HFA16TA60CPbF
rr
Vishay Semiconductors
- 55 to + 150
RRM
VALUES
600
60
24
36
14
16
) and does not exhibit any
8
the
www.vishay.com/doc?91000
b
portion of recovery. The
latest
www.vishay.com
in
UNITS
°C
W
A
V
epitaxial
1

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HFA16TA60CPBF Summary of contents

Page 1

... Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing • Reduced parts count DESCRIPTION VS-HFA16TA60CPbF is a state of the art center tap ultrafast recovery diode. construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available ...

Page 2

... VS-HFA16TA60CPbF Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER LEG (T PARAMETER SYMBOL Cathode to anode V BR breakdown voltage Maximum forward voltage V FM Maximum reverse I RM leakage current Junction capacitance C T Series inductance L S DYNAMIC RECOVERY CHARACTERISTICS PER LEG (T PARAMETER SYMBOL t rr Reverse recovery time t rr1 See fig ...

Page 3

... Fig Typical Junction Capacitance vs. Reverse Voltage (Per Leg 0.01 0.001 0. Rectangular Pulse Duration (s) 1 Characteristics (Per Leg) thJC DiodesEurope@vishay.com This document is subject to change without notice. VS-HFA16TA60CPbF Vishay Semiconductors T = 150 ° 125 ° ° 100 200 300 400 500 600 ...

Page 4

... VS-HFA16TA60CPbF Vishay Semiconductors 200 125 ° ° 100 dI /dt (A/µs) 94058_05 F Fig Typical Reverse Recovery Time vs. dI (Per Leg 8 4 100 dI /dt (A/µs) 94058_06 F Fig Typical Recovery Current vs. dI (Per Leg) www.vishay.com For technical questions within your region, please contact one of the following: 4 DiodesAmericas@vishay ...

Page 5

... F ( area under curve defined and I RRM Q (5) dI /dt - peak rate of change of (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions DiodesEurope@vishay.com This document is subject to change without notice. VS-HFA16TA60CPbF Vishay Semiconductors ( RRM (5) / RRM = rr 2 portion www.vishay.com www ...

Page 6

... VS-HFA16TA60CPbF Vishay Semiconductors ORDERING INFORMATION TABLE Device code Dimensions Part marking information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ® HEXFRED ...

Page 7

... Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 For technical questions within your region, please contact one of the following: Revision: 08-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, TO-220AB B Seating plane ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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