RF2001T3D Rohm Semiconductor, RF2001T3D Datasheet

DIODE FAST REC 300V 10A TO220FN

RF2001T3D

Manufacturer Part Number
RF2001T3D
Description
DIODE FAST REC 300V 10A TO220FN
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RF2001T3D

Voltage - Forward (vf) (max) @ If
1.3V @ 10A
Current - Reverse Leakage @ Vr
10µA @ 300V
Current - Average Rectified (io) (per Diode)
10A
Voltage - Dc Reverse (vr) (max)
300V
Reverse Recovery Time (trr)
25ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220FN-3 (Straight Leads)
Product
Fast Recovery Rectifier
Configuration
Dual Common Cathode
Reverse Voltage
200 V
Forward Voltage Drop
1.3 V
Recovery Time
25 ns
Forward Continuous Current
20 A
Max Surge Current
100 A
Reverse Current Ir
10 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RF2001T3D
Manufacturer:
ROHM
Quantity:
1 000
Part Number:
RF2001T3D
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Part Number:
RF2001T3DFF65
Manufacturer:
PANJITROHM
Quantity:
1 113
Company:
Part Number:
RF2001T3DNZC9
Quantity:
9 000
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
General rectification
1) Cathode common type.
2) Ultra Low V
3) Very fast recovery
4) Low switching loss
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Storage temoerature
(*1)Business frequency, Rating of R-load, Tc=113C  1/2 Io per diode
Forward voltage
Reverse current
Reverse recovery time
Fast recovery diodes
Applications
Features
Construction
Absoslute maximum ratings (Ta=25C)
Electrical characteristic (Ta=25C)
(TO-220)
RF2001T3D
F
Parameter
Parameter
1.2
1.3
0.8
Dimensions (Unit : mm)
ROHM : TO220FN
(1) (2) (3)
10.0±0.3
    0.1
Symbol
Symbol
Tstg
Manufacture Date
V
I
V
FSM
V
trr
Io
Tj
I
RM
R
R
F
Min.
-
-
-
1/3
-55 to +150
Limits
0.7±0.1
300
300
100
150
Typ.
20
-
-
-
0.05
4.5±0.3
    0.1
Max.
1.3
10
25
2.6±0.5
2.8±0.2
    0.1
Unit
Unit
C
C
μA
ns
V
V
A
A
V
I
V
I
Structure
F
F
=10A
R
=0.5A,I
=300V
(1) (2) (3)
Conditions
R
2010.02 - Rev.D
=1A,Irr=0.25*I
R

Related parts for RF2001T3D

RF2001T3D Summary of contents

Page 1

... Fast recovery diodes RF2001T3D Applications General rectification Features 1) Cathode common type. (TO-220) 2) Ultra Low Very fast recovery 4) Low switching loss Construction Silicon epitaxial planar Absoslute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz/1cyc) ...

Page 2

... RF2001T3D Electrical characteristics curves 10 Ta=150C 1 Ta=125C Ta=25C Ta=75C 0.1 Ta=-25C 0.01 0.001 FORWARD VOLTAGE:V (mV CHARACTERISTICS F F 1.17 Ta=25C I =10A 1.16 F n=30pcs 1.15 1.14 1.13 AVE:1.135V 1.12 V DISPERSION MAP F 200 Ifsm 8.3ms 150 100 50 AVE:157. DISPERSION MAP ...

Page 3

... RF2001T3D D=t D=1/2 DC Tj=150  Sin(=180 100 125 AMBIENT TEMPERATURE:Ta(  C) Derating Curve"(Io-Ta) www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved =150V R 30 D=1 Sin(=180 100 125 150 CASE TEMPARATURE:Tc(  C) Derating Curve"(Io-Tc) 3/3 Data Sheet ...

Page 4

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

Related keywords