SBT80-10LS SANYO, SBT80-10LS Datasheet
SBT80-10LS
Manufacturer Part Number
SBT80-10LS
Description
DIODE SCHOTTKY 100V 8A TO-220FI
Manufacturer
SANYO
Datasheet
1.SBT80-10LS.pdf
(3 pages)
Specifications of SBT80-10LS
Voltage - Forward (vf) (max) @ If
800mV @ 3A
Current - Reverse Leakage @ Vr
100µA @ 50V
Current - Average Rectified (io) (per Diode)
8A
Voltage - Dc Reverse (vr) (max)
100V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220-3, TO-220FI(LS)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Other names
869-1029
Ordering number : ENA0347
SBT80-10LS
Applications
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Note) * : Value per element
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Thermal Resistance
•
•
•
•
•
•
•
High frequency rectification (switching regulators, converters, choppers).
Tj=150 C.
Low forward voltage (V F max=0.80V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Micaless package facilitating mounting.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Symbol
Symbol
Rth(j-c)
V RRM
V RSM
I FSM
Tstg
V R
V F
I O
I R
Tj
C
SANYO Semiconductors
50Hz resistive load, Sine wave Tc=81 C
50Hz sine wave, 1 cycle
I R =1mA, Tj=25 C*
I F =3.0A, Tj=25 C*
V R =50V, Tj=25 C*
V R =10V, Tj=25 C*
Junction-Case : Smoothed DC
Schottky Barrier Diode (Twin Type · Cathode Common)
100V, 8A Rectifier
SBT80-10LS
Conditions
Conditions
80906 / 22006SD MS IM TB-00002083
DATA SHEET
min
100
Ratings
typ
Ratings
90
--55 to +150
--55 to +150
max
0.80
100
105
0.1
5.0
60
8
No. A0347-1/3
C / W
Unit
Unit
mA
pF
V
V
A
A
V
V
C
C
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SBT80-10LS Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN SBT80-10LS SANYO Semiconductors Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 8A Rectifier ...
Page 2
... Rectangular wave 8 6 360 4 (1)Rectangular wav e =60 (2)Rectangular wav e =120 2 (3)Rectangular wav e =180 (4)Sine wav e =180 Average Output Current SBT80-10LS 2.8 1.2 0 Anode 2 : Cathode 3 : Anode SANYO : TO-220FI(LS) 100 10 1.0 2.0 2.5 IT08511 7.0 (3) 6.5 (4) 6.0 (2) 5.5 5.0 4.5 4.0 3 ...
Page 3
... SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2006. Specifications and information herein are subject to change without notice. SBT80-10LS 100 ...