DHG10C600PB IXYS, DHG10C600PB Datasheet
DHG10C600PB
Manufacturer Part Number
DHG10C600PB
Description
DIODE FAST REC 600V 5A TO-220AB
Manufacturer
IXYS
Datasheet
1.DHG10C600PB.pdf
(2 pages)
Specifications of DHG10C600PB
Voltage - Forward (vf) (max) @ If
2.2V @ 5A
Current - Reverse Leakage @ Vr
10µA @ 600V
Current - Average Rectified (io) (per Diode)
5A
Voltage - Dc Reverse (vr) (max)
600V
Reverse Recovery Time (trr)
35ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole
Package / Case
TO-220AB
Vrrm, (v)
600
Ifavm, D = 0.5, Total, (a)
10
Ifavm, D = 0.5, Per Diode, (a)
5
@ Tc, (°c)
110
Ifsm, 10 Ms, Tvj=45°c, (a)
40
Vf, Max, Tvj =125°c, (v)
2.02
@ If, (a)
5
Trr, Typ, Tvj =25°c, (ns)
35
Irm , Typ, Tvj =25°c, (a)
2.0
@ -di/dt, (a/µs)
100
Tvjm, (°c)
150
Rthjc, Max, (k/w)
3.15
Package Style
TO-220AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DHG 10 C 600PB
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
I
V
I
V
r
R
T
P
I
I
t
C
E
I
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
Features / Advantages:
R
FSM
RM
AR
FAV
F
rr
VJ
RRM
F0
tot
J
AS
operation
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
thJC
forward voltage
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
Definition
max. repetitive reverse voltage
reverse current
average forward current
for power loss calculation only
I
t
V
Conditions
V
V
I
I
I
rectangular, d = 0.5
I
-di
V
V
I
p
F
F
F
F
F
AS
R
R
R
R
A
F
Applications:
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
=
=
=
=
= 10
=
=
=
=
=
=
=
/dt
switching devices
supplies (SMPS)
1.5·V
400
300
tbd
600
600
10
10
= 100 A/µs
5
5
5
ms (50 Hz), sine
A;
V
V;
A; L =
A
A
A
A
R
V
V
1
typ.;
f = 1 MHz
* Data according to IEC 60747and per diode unless otherwise specified
f = 10 kHz
100
2
µH
3
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
VJ
VJ
VJ
VJ
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
VJ
C
VJ
= 150 °C
=
= 45 °C
=
= 25
=
=
=
=
= 110 °C
= 25
= 125
= 25
= 125
=
125
125
25
25
25
25
25
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
°C
DHG 10 C 600PB
Package:
TO-220AB
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
V
I
t
FAV
rr
min.
RRM
-55
R a t i n g s
=
=
=
typ.
tbd
35
2
600
Backside: cathode
35
5
max.
2.20
2.98
2.02
2.85
1.31
3.15
600
133
150
advanced
tbd
tbd
10
40
40
V
A
ns
1
5
Unit
K/W
m
mA
mJ
µA
pF
°C
ns
ns
W
Ω
V
V
V
V
V
A
V
A
A
A
A
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DHG10C600PB Summary of contents
Page 1
... C junction capacitance J E non-repetitive avalanche energy AS I repetitive avalanche current AR IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Applications: ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● ...
Page 2
... Irms is typically limited by: 1. pin-to-chip resistance current capability of the chip. In case common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Outlines TO-220AB IXYS reserves the right to change limits, conditions and dimensions. © 2006 IXYS all rights reserved Conditions per pin* M Dim ...