BAT54ALT1G ON Semiconductor, BAT54ALT1G Datasheet - Page 2

• Manufacturer Part Number: BAT54ALT1G
• Description: DIODE SCHOTTKY DET/SW 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of BAT54ALT1G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Anode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: - 55 C to + 125 C
• Mounting Style: SMD/SMT
• Capacitance, Junction: 7.6 pF
• Current, Forward: 200 mA
• Package Type: SOT-23 (TO-236)
• Power Dissipation: 225 mW
• Primary Type: Schottky Barrier
• Speed, Switching: Fast
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -55 to +125 °C
• Time, Recovery: 5 ns
• Voltage, Forward: 0.52 V
• Voltage, Reverse: 30 V
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 30V
• Avg. Forward Curr (max): 0.2A
• Rev Curr: 2uA
• Peak Non-repetitive Surge Current (max): 0.6A
• Forward Voltage: 0.8V
• Operating Temp Range: -55C to 125C
• Rev Recov Time: 5ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT54ALT1GOSTR

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Total Capacitance
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Time
Forward Voltage
Forward Voltage
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current
(I
(V
(V
(I
(I
(I
(I
(I
(I
(t < 1.0 s)
R
F
F
F
F
F
F
R
R
= 0.1 mAdc)
= 30 mAdc)
= 100 mAdc)
= I
= 1.0 mAdc)
= 10 mAdc)
= 10 mA)
= 1.0 V, f = 1.0 MHz)
= 25 V)
R
= 10 mAdc, I
R(REC)
Characteristic
= 1.0 mAdc, Figure 1)
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
BAT54ALT1
2
Symbol
V
I
I
(BR)R
FRM
FSM
C
V
V
V
V
V
I
t
I
R
rr
F
F
F
F
F
F
T
Min
30
−
−
−
−
−
−
−
−
−
−
−
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
−
−
−
Max
0.24
0.32
0.40
200
300
600
2.0
0.5
0.8
5.0
10
−
mAdc
mAdc
mAdc
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF
ns
V