BAT54CLT1G ON Semiconductor, BAT54CLT1G Datasheet

DIODE SCHOTTKY DUAL 30V CC SOT23

BAT54CLT1G

Manufacturer Part Number
BAT54CLT1G
Description
DIODE SCHOTTKY DUAL 30V CC SOT23
Manufacturer
ON Semiconductor
Datasheets

Specifications of BAT54CLT1G

Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
30V
Reverse Recovery Time (trr)
5ns
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Configuration
Dual Common Cathode
Recovery Time
5 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA
Maximum Power Dissipation
225 mW
Operating Temperature Range
- 55 C to + 125 C
Mounting Style
SMD/SMT
Capacitance, Junction
7.6 pF
Current, Forward
200 mA
Package Type
SOT-23 (TO-236)
Power Dissipation
225 mW
Primary Type
Schottky Barrier
Speed, Switching
Fast
Temperature, Junction, Maximum
+125 °C
Temperature, Operating
-55 to +125 °C
Time, Recovery
5 ns
Voltage, Forward
0.52 V
Voltage, Reverse
30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT54CLT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAT54CLT1G
Manufacturer:
MOT
Quantity:
6 000
Part Number:
BAT54CLT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
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Manufacturer:
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BAT54CLT1G
Dual Common Cathode
Schottky Barrier Diodes
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand−held and portable applications where
space is limited.
Features
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
© Semiconductor Components Industries, LLC, 2010
August, 2010 − Rev. 6
MAXIMUM RATINGS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommen-
ded Operating Conditions is not implied. Extended exposure to stresses
above the Recommended Operating Conditions may affect device reliability.
Non−Repetitive Peak Forward
Current
Repetitive Peak Forward Current
= 66%
Reverse Voltage
Forward Power Dissipation
Thermal Resistance,
Forward Current (DC)
Junction Temperature
Storage Temperature Range
These Schottky barrier diodes are designed for high speed switching
Pulse Wave = 1 sec, Duty Cycle
Compliant
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ I
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
@ T
Derate above 25°C
Junction-to-Ambient
A
= 25°C
t
p
< 10 msec
Rating
(T
J
= 125°C unless otherwise noted)
Symbol
R
I
I
T
FSM
FRM
V
P
T
I
qJA
stg
F
R
F
J
F
= 10 mAdc
508 (Note 1)
311 (Note 2)
−55 to +125
−55 to +150
200 Max
Value
225
600
300
1.8
30
1
mW/°C
°C/W
Unit
mW
mA
mA
mA
°C
°C
V
†For information on tape and reel specifications,
BAT54CLT1G
BAT54CLT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SCHOTTKY BARRIER DIODES
*Date Code orientation and/or position may
Device
DUAL COMMON CATHODE
vary depending upon manufacturing location.
1
CASE 318
STYLE 9
5C
M
G
(Note: Microdot may be in either location)
SOT−23
ANODE
ORDERING INFORMATION
2
1
http://onsemi.com
3
= Device Code
= Date Code
= Pb−Free Package
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
30 VOLT
CATHODE
3
Publication Order Number:
10,000/Tape & Reel
3000/Tape & Reel
1
ANODE
MARKING
DIAGRAM
Shipping
2
BAT54CLT1/D
5C MG
G

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BAT54CLT1G Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54CLT1G SOT−23 3000/Tape & Reel (Pb−Free) BAT54CLT3G SOT−23 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage ( mA) R Total Capacitance ( 1.0 MHz) R Reverse Leakage ( Forward Voltage (I = 0.1 mAdc) F Forward Voltage (I = ...

Page 3

W + 100 mH F 0.1 mF DUT 50 W OUTPUT PULSE GENERATOR Notes 2.0 kW variable resistor adjusted for a Forward Current (I Notes: 2. Input pulse is adjusted so I Notes: ...

Page 4

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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