NSDEMP11XV6T1G ON Semiconductor, NSDEMP11XV6T1G Datasheet

NSDEMP11XV6T1G

Manufacturer Part Number

NSDEMP11XV6T1G

Description

DIODE SWITCH QUAD CA 80V SOT563

Manufacturer

ON Semiconductor

Datasheet

1.NSDEMP11XV6T1G.pdf (3 pages)

Specifications of NSDEMP11XV6T1G

Voltage - Forward (vf) (max) @ If

1.2V @ 100mA

Current - Reverse Leakage @ Vr

100nA @ 70V

Current - Average Rectified (io) (per Diode)

100mA (DC)

Voltage - Dc Reverse (vr) (max)

80V

Reverse Recovery Time (trr)

4ns

Diode Type

Standard

Speed

Small Signal =< 200mA (Io), Any Speed

Diode Configuration

2 Pair Common Anode

Mounting Type

Surface Mount

Package / Case

SOT-563, SOT-6

Product

Switching Diodes

Peak Reverse Voltage

80 V

Forward Continuous Current

0.1 A

Max Surge Current

2 A

Configuration

Double Dual Common Anode

Recovery Time

4 ns

Forward Voltage Drop

1.2 V

Maximum Reverse Leakage Current

0.1 uA

Operating Temperature Range

- 55 C to + 150 C

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Mounting Style

SMD/SMT

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NSDEMP11XV6T1GOS
NSDEMP11XV6T1GOS
NSDEMP11XV6T1GOSTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSDEMP11XV6T1G

Manufacturer:

Quantity:

4 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NSDEMP11XV6T1G

Manufacturer:

ON Semiconductor

Quantity:

1 100

Company:

BOSTOCK HK LIMITED

Part Number:

NSDEMP11XV6T1G

Manufacturer:

Quantity:

8 000

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NSDEMP11XV6T1,

NSDEMP11XV6T5

Common Anode Quad

Array Switching Diode

designed for use in ultra high speed switching applications. The

NSDEMP11XV6T1 device is housed in the SOT−563 package which

is designed for low power surface mount applications, where board

space is at a premium.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. t = 1 mS

2. FR−4 @ Minimum Pad

May, 2006 − Rev. 3

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

Reverse Voltage

Peak Reverse Voltage

Forward Current

Peak Forward Current

Peak Forward Surge Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Junction and Storage Temperature

These Common Anode Epitaxial Planar QUAD Diodes are

Fast t

Low C

These are Pb−Free Devices

(Both Junctions Heated)

(One Junction Heated)

Characteristic

Rating

= 25°C)

= 25°C

Symbol

(Note 1)

FSM

, T

qJA

stg

(Note 2)

−55 to

Value

+150

Max

100

300

357

350

500

250

2.0

2.9

4.0

mW/°C

mAdc

°C/W

Unit

Vdc

Adc

°C

†For information on tape and reel specifications,

*This package is inherently Pb−Free.

NSDEMP11XV6T1

NSDEMP11XV6T1G

NSDEMP11XV6T5

NSDEMP11XV6T5G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

(3)

(4)

MARKING DIAGRAM

P9 = Device Code

http://onsemi.com

= Date Code

= Pb−Free Package

CASE 463A

SOT−563

PLASTIC

P9 M G

SOT−563* 4000/Tape & Reel

SOT−563*

Package

(5)

Publication Order Number:

(2)

NSDEMP11XV6T1/D

4000/Tape & Reel

8000/Tape & Reel

Shipping

(1)

(6)

†

Related parts for NSDEMP11XV6T1G

NSDEMP11XV6T1G Summary of contents

Page 1

... D (Note 2) 4.0 mW/°C (Note 2) °C/W R 250 qJA (Note 2) ° − stg NSDEMP11XV6T1 +150 NSDEMP11XV6T1G NSDEMP11XV6T5 NSDEMP11XV6T5G †For information on tape and reel specifications, *This package is inherently Pb−Free. 1 http://onsemi.com (2) (3) (1) (4) (5) (6) 1 SOT−563 CASE 463A PLASTIC MARKING DIAGRAM Device Code ...

Page 2

NSDEMP11XV6T1, NSDEMP11XV6T5 ELECTRICAL CHARACTERISTICS Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 3. t Test Circuit for NSDEMP11XV6T1 in Figure 4. rr TYPICAL ELECTRICAL CHARACTERISTICS 100 T = 85° 1.0 T ...

Page 3

... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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