BAV70M3T5G ON Semiconductor, BAV70M3T5G Datasheet
BAV70M3T5G
Manufacturer Part Number
BAV70M3T5G
Description
IC DIODE DUAL SW CC 70V SOT-723
Manufacturer
ON Semiconductor
Datasheet
1.BAV70M3T5G.pdf
(4 pages)
Specifications of BAV70M3T5G
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
75V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-723
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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BAV70M3T5G
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ON Semiconductor
Quantity:
120 000
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BAV70M3T5G
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BAV70M3T5G
Dual Switching Diode
Common Cathode
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
© Semiconductor Components Industries, LLC, 2009
January, 2009 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation
Thermal Resistance,
Total Device Dissipation
Thermal Resistance,
Junction and Storage Temperature
The BAV70M3T5G device is a spin−off of our popular SOT−23
Reduces Board Space
This is a Halide−Free Device
This is a Pb−Free Device
FR−5 Board (Note 1)
T
Derate above 25°C
Junction−to−Ambient
Alumina Substrate, (Note 2) T
Derate above 25°C
Junction−to−Ambient
A
= 25°C
Characteristic
Rating
(EACH DIODE)
A
= 25°C
I
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
−55 to
Value
+150
Max
200
500
265
470
640
195
2.1
5.1
75
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Vdc
mW
mW
°C
†For information on tape and reel specifications,
BAV70M3T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
3
Device
DUAL COMMON CATHODE
1
ANODE
SWITCHING DIODES
ORDERING INFORMATION
AL = Specific Device Code
M
1
2
http://onsemi.com
= Date Code
CASE 631AA
(Pb−Free)
CATHODE
SOT−723
STYLE 3
SOT−723
Package
70 V
3
Publication Order Number:
8000/Tape & Reel
ANODE
MARKING
DIAGRAM
1
Shipping
2
BAV70M3/D
AL M
†
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BAV70M3T5G Summary of contents
Page 1
... BAV70M3T5G Dual Switching Diode Common Cathode The BAV70M3T5G device is a spin−off of our popular SOT−23 three−leaded device designed for switching applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount applications where board space premium ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Voltage Leakage Current (Note 3) Diode Capacitance Forward Voltage Reverse Recovery Time ( mA 1.0 mA) (Figure R(REC) 3. For each individual diode while ...
Page 3
T = 85° 125° 55° 25° 150°C A 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0 FORWARD VOLTAGE (V) F Figure 2. Forward ...
Page 4
... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...