BAV99WT1 ON Semiconductor, BAV99WT1 Datasheet - Page 2

• Manufacturer Part Number: BAV99WT1
• Description: DIODE SWITCH SS DUAL 70V SOT323
• Manufacturer: ON Semiconductor

Specifications of BAV99WT1

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 2.5µA @ 70V
• Current - Average Rectified (io) (per Diode): 215mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BAV99WT1OSCT

1. FR−5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
+10 V
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Total Device Dissipation FR−5 Board, (Note 1) T
Thermal Resistance Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) T
Thermal Resistance Junction−to−Ambient
Junction and Storage Temperature
Reverse Breakdown Voltage (I
Reverse Voltage Leakage Current (V
Diode Capacitance
Forward Voltage
Reverse Recovery Time (I
Forward Recovery Voltage (I
Derate above 25 C
Derate above 25 C
(V
50 W OUTPUT
GENERATOR
R
PULSE
= 0, f = 1.0 MHz)
820 W
0.1 mF
2 k
(I
(I
(I
(I
100 mH
F
F
F
F
= 1.0 mAdc)
= 10 mAdc)
= 50 mAdc)
= 150 mAdc)
Characteristic
F
Notes: (a) A 2.0 kW variable resistor adjusted for a Forward Current (I
Notes:
Notes:
= I
F
R
I
(BR)
= 10 mA, t
F
= 10 mAdc, i
(b) Input pulse is adjusted so I
(c) t
Characteristic
= 100 mA)
DUT
(V
(V
p
R
R
R
Figure 1. Recovery Time Equivalent Test Circuit
» t
= 70 Vdc)
= 25 Vdc, T
= 70 Vdc, T
r
(T
rr
= 20 ns)
A
R(REC)
= 25 C unless otherwise noted) (Each Diode)
0.1 mF
OSCILLOSCOPE
A
BAV99WT1, BAV99RWT1
= 25 C
50 W INPUT
SAMPLING
= 1.0 mAdc) (Figure 1) R
J
J
= 150 C)
= 150 C)
A
= 25 C
http://onsemi.com
R(peak)
2
V
R
is equal to 10 mA.
Symbol
T
R
R
J
t
P
P
, T
r
qJA
qJA
L
INPUT SIGNAL
D
D
stg
= 100 W
10%
90%
t
p
Symbol
V
t
V
C
V
(BR)
I
t
R
FR
rr
D
F
−65 to +150
F
) of 10 mA.
Max
200
625
300
417
1.6
2.4
I
I
R
F
Min
70
−
−
−
−
−
−
−
−
−
−
(I
F
= I
at i
OUTPUT PULSE
R
1000
1250
Max
1.75
715
855
2.5
1.5
6.0
30
50
= 10 mA; measured
R(REC)
t
−
rr
i
R(REC)
mW/ C
mW/ C
= 1 mA)
Unit
mW
mW
C/W
C/W
C
mVdc
= 1 mA
mAdc
Unit
Vdc
pF
ns
V
t