MURB1660CTT4G ON Semiconductor, MURB1660CTT4G Datasheet - Page 3

• Manufacturer Part Number: MURB1660CTT4G
• Description: DIODE ULTRA FAST 8A 600V D2PAK
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MURB1660CTT4G

• Voltage - Forward (vf) (max) @ If: 1.5V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 60ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MURB1660CTT4GOS; MURB1660CTT4GOS; MURB1660CTT4GOSTR

0.05
0.02
0.01
1.0
0.5
0.2
0.1
0.01
0.02
D = 0.5
SINGLE PULSE
0.05
0.1
0.05
0.01
0.1
300
100
1 K
30
10
0.2
1
Figure 6. Typical Capacitance, Per Leg
0.5
Figure 5. Thermal Response
V
R
1
http://onsemi.com
, REVERSE VOLTAGE (V)
MURB1660CT
t, TIME (ms)
2
10
3
P
(pk)
Duty Cycle, D = t
T
J
= 25°C
t
1
5
t
2
10
1
/t
2
T
J(pk)
Z
D curves apply for power
pulse train shown
read time at T
20
qJC(t)
− T
C
100
= r(t) R
= P
(pk)
50
1
qJC
Z
qJC(t)
100
200
500
1K