BAV70DXV6T5 ON Semiconductor, BAV70DXV6T5 Datasheet
BAV70DXV6T5
Manufacturer Part Number
BAV70DXV6T5
Description
DIODE SWITCH DUAL CC 70V SOT563
Manufacturer
ON Semiconductor
Datasheet
1.BAV70DXV6T5.pdf
(8 pages)
Specifications of BAV70DXV6T5
Voltage - Forward (vf) (max) @ If
1.25V @ 150mA
Current - Reverse Leakage @ Vr
2.5µA @ 70V
Current - Average Rectified (io) (per Diode)
200mA (DC)
Voltage - Dc Reverse (vr) (max)
70V
Reverse Recovery Time (trr)
6ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
2 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
BAV70DXV6T5OS
BAV70DXV6T1,
BAV70DXV6T5
Monolithic Dual Switching
Diode Common Cathode
Features
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Reverse Voltage
Forward Current
Peak Forward Surge Current
Total Device Dissipation, T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation, T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage
Temperature Range
These are Pb−Free Devices
(Both Junctions Heated)
(One Junction Heated)
Characteristic
Characteristic
Rating
(EACH DIODE)
A
A
= 25°C
= 25°C
Preferred Device
I
Symbol
Symbol
Symbol
FM(surge)
T
R
R
J
V
P
P
, T
I
qJA
qJA
F
R
D
D
stg
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
(Note 1)
−55 to
Value
+150
Max
Max
200
500
357
350
500
250
2.9
4.0
70
1
mW/°C
mW/°C
mAdc
mAdc
°C/W
°C/W
Unit
Unit
Unit
Vdc
mW
mW
°C
†For information on tape and reel specifications,
*These packages are inherently Pb−Free.
Preferred devices are recommended choices for future use
and best overall value.
BAV70DXV6T1
BAV70DXV6T1G
BAV70DXV6T5
BAV70DXV6T5G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
CATHODE
Device
(Note: Microdot may be in either location)
ANODE
ANODE
ORDERING INFORMATION
A4 = Specific Device Code
M
G
6
MARKING DIAGRAM
5
4
http://onsemi.com
= Month Code
= Pb−Free Package
BAV70DXV6T1
1
1
SOT−563* 4000/Tape & Reel
SOT−563* 4000/Tape & Reel
SOT−563* 8000/Tape & Reel
SOT−563* 8000/Tape & Reel
Package
A4 M G
Publication Order Number:
G
CASE 463A
SOT−563
PLASTIC
BAV70DXV6T1/D
ANODE
1
2
ANODE
Shipping
3
CATHODE
†
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BAV70DXV6T5 Summary of contents
Page 1
... J stg +150 BAV70DXV6T1 BAV70DXV6T1G BAV70DXV6T5 BAV70DXV6T5G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *These packages are inherently Pb−Free. Preferred devices are recommended choices for future use and best overall value ...
Page 2
...
Page 3
ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Breakdown Voltage (Note 100 mAdc) (BR) Reverse Voltage Leakage Current (Note Vdc 150° Vdc Vdc, T ...
Page 4
...
Page 5
T = 85° 1 25°C A 0.1 0.2 0.4 0.6 0 FORWARD VOLTAGE (VOLTS) F Figure 2. Forward Voltage 1.0 0.9 0.8 0.7 0.6 0 Curves Applicable to Each Anode 10 1.0 T ...
Page 6
...
Page 7
... SCALE 20:1 details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81− ...
Page 8
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