US1M-13-F Diodes Inc, US1M-13-F Datasheet - Page 2

DIODE ULTRA-FST GPP 1000V 1A SMA

US1M-13-F

Manufacturer Part Number
US1M-13-F
Description
DIODE ULTRA-FST GPP 1000V 1A SMA
Manufacturer
Diodes Inc
Datasheet

Specifications of US1M-13-F

Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Capacitance @ Vr, F
10pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free by exemption / RoHS Compliant
Other names
US1M-FDITR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
US1M-13-F
Manufacturer:
DIODES
Quantity:
500
Part Number:
US1M-13-F
Manufacturer:
NEC
Quantity:
2 180
Part Number:
US1M-13-F
Manufacturer:
DIODES
Quantity:
1 000
Part Number:
US1M-13-F
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
US1M-13-F
0
Company:
Part Number:
US1M-13-F
Quantity:
5 000
US1A - US1M
Document number: DS16008 Rev. 9 - 2
1.0
0.5
40
30
20
10
0
0
25
1
Fig. 3 Forward Surge Current Derating Curve
Fig. 1 Forward Current Derating Curve
50
T , TERMINAL TEMPERATURE ( C)
NUMBER OF CYCLES AT 60Hz
T
75
10
100
125
°
100
150
www.diodes.com
2 of 4
1,000
0.01
0.01
100
1.0
1.0
0.1
0.1
10
10
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
0
0
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
20
Fig. 4 Typical Reverse Characteristics
Fig. 2 Typical Forward Characteristics
0.4
T = 25 C
T = 100 C
j
j
40
°
°
0.8
60
US1A - US1D
80
1.2
US1J - US1M
US1G
100
US1A - US1M
1.6
120
© Diodes Incorporated
140
2.0
July 2009

Related parts for US1M-13-F