10BQ015TRPBF Vishay, 10BQ015TRPBF Datasheet - Page 2

• Manufacturer Part Number: 10BQ015TRPBF
• Description: DIODE SCHOTTKY 15V 1A SMB
• Manufacturer: Vishay

Specifications of 10BQ015TRPBF

• Voltage - Forward (vf) (max) @ If: 350mV @ 1A
• Voltage - Dc Reverse (vr) (max): 15V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 500µA @ 15V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 15 V
• Forward Voltage Drop: 0.44 V @ 2 A
• Forward Continuous Current: 1 A
• Max Surge Current: 140 A
• Reverse Current Ir: 500 uA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 10BQ015PBFTR; VS-10BQ015PBFTR; VS-10BQ015PBFTR; VS-10BQ015TRPBF; VS10BQ015PBFTR; VS10BQ015TRPBF

Document Number: 94110
10BQ015PbF
Bulletin PD-20782 07/04
Electrical Specifications
Thermal-Mechanical Specifications
Voltage Ratings
Absolute Maximum Ratings
T
T
R
R
wt
(**) Mounted 1 inch square PCB
V
V
I
I
E
I
V
I
V
r
C
L
dv/dt Max. Voltage Rate of Change
(*) dPtot
(1) Pulse Width < 300µs, Duty Cycle < 2%
F(AV)
FSM
AR
RM
t
J
stg
R
RWM
AS
FM
F(TO)
thJL
thJA
S
T
dTj
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
Max. Thermal Resistance
Junction to Lead
Max. Thermal Resistance
Junction to Ambient
Approximate Weight
Case Style
Device Marking
Parameters
Parameters
Parameters
Part number
Max. DC Reverse Voltage (V)
Max. Working Peak Reverse Voltage (V)
Max. Average Forward Current
* See Fig. 5
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 7
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
Max. Forward Voltage Drop
* See Fig. 1
Max. Reverse Leakage Current
* See Fig. 2
Threshold Voltage
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
<
Rth( j-a)
1
thermal runaway condition for a diode on its own heatsink
(1)
(1)
(**)
0.10 (0.003) g (oz.)
- 55 to 125
- 55 to 150
10BQ
10BQ Units
10BQ
10000
0.35
0.44
0.32
0.40
140
390
1.0
1.0
1.0
0.5
2.0
40
12
80
36
-
-
IR1C
SMB
Units
Units
°C/W DC operation
°C/W DC operation (See Fig. 4)
V/µs
mΩ
mA
mA
mJ
nH
pF
°C
°C
A
A
A
V
V
V
V
V
Similar to DO-214AA
50% duty cycle @ T
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
Current decayng linearly to zero in 1 µsec
Frequency limited by T
@ 1.0A
@ 2.0A
@ 1.0A
@ 2.0A
T
T
T
V
Measured lead to lead 5mm from package body
(Rated V
J
J
J
J
R
= 25 °C, I
= 25 °C
= 100 °C
= T
= 5V
J
max.
DC
R
)
, (test signal range 100KHz to 1MHz) 25°C
AS
Conditions
= 1A, L = 2mH
Conditions
Conditions
T
T
V
10BQ015PbF
J
J
R
L
= 25 °C
= 125 °C
= 84 °C, rectangular wave form.
= rated V
J
max. V
15
25
A
R
= 1.5 x V
Following any rated
load condition and
with rated V
www.vishay.com
R
typical
RRM
applied
2