DIODE SCHOTTKY 40V 0.5A SOT23-3

ZHCS500TA

Manufacturer Part NumberZHCS500TA
DescriptionDIODE SCHOTTKY 40V 0.5A SOT23-3
ManufacturerDiodes Zetex
ZHCS500TA datasheet
 

Specifications of ZHCS500TA

Voltage - Forward (vf) (max) @ If550mV @ 500mAVoltage - Dc Reverse (vr) (max)40V
Current - Average Rectified (io)500mA (DC)Current - Reverse Leakage @ Vr40µA @ 30V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)10nsCapacitance @ Vr, F20pF @ 25V, 1MHz
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Rectifier TypeSchottky DiodeConfigurationSingle
Peak Rep Rev Volt40VAvg. Forward Curr (max)1A
Rev Curr40uAPeak Non-repetitive Surge Current (max)6.75A
Forward Voltage1.05VOperating Temp Range-55C to 125C
Package TypeSOT-23Rev Recov Time10ns
Operating Temperature ClassificationMilitaryMountingSurface Mount
Pin Count3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesZHCS500TR  
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1- September 1997
FEATURES:
Low V
F
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: ZS5
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
= 500mA
F
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
= 25° C
amb
Storage Temperature Range
Junction Temperature
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
SYMBOL
Reverse Breakdown
V
(BR)R
Voltage
Forward Voltage
V
F
Reverse Current
I
R
Diode Capacitance
C
D
Reverse Recovery
t
rr
Time
*Measured under pulsed conditions. Pulse width= 300 s; duty cycle 2% .
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
t 10ms
P
tot
T
stg
T
j
= 25° C unless otherwise stated).
amb
MIN.
TYP.
MAX.
UNIT
40
60
V
270
300
mV
300
350
mV
370
460
mV
465
550
mV
550
670
mV
640
780
mV
810
1050
mV
440
mV
15
40
20
pF
10
ns
ZHCS500
1
C
1
A
3
3
SOT23
VALUE
UNIT
40
V
500
mA
550
mV
1000
mA
6.75
A
3
A
330
mW
-55 to + 150
° C
125
° C
CONDITIONS.
I
= 200 A
R
I
= 50mA*
F
I
= 100mA*
F
I
= 250mA*
F
I
= 500mA*
F
I
= 750mA*
F
I
= 1000mA*
F
I
= 1500mA*
F
I
= 500mA, T
= 100° C*
F
amb
V
= 30V
A
R
f= 1MHz,V
= 25V
R
switched from
I
= 500mA to I
= 500mA
F
R
Measured at I
= 50mA
R
2

ZHCS500TA Summary of contents

  • Page 1

    SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- September 1997 FEATURES: Low V F High Current Capability APPLICATIONS converters Mobile telecomms PCMCIA PARTMARK DETAIL: ZS5 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current (Continuous) ...

  • Page 2

    ZHCS500 TYPICAL CHARACTERISTICS 1 100m 10m 1m 0 0.1 0.2 0 Forward Voltage ( 0.6 DC D=0.5 0.4 D=0.2 0.2 D=0.1 D=0.05 0 100 105 110 115 T - Case Temperature (°C) ...

  • Page 3

    TYPICAL CHARACTERISTICS 300 200 D=0.5 100 D=0.2 D=0.1 D=0.05 0 100u 1m 10m 100m Pulse Width (s) ZHCS500 Single Pulse 1 10 100 ...