DIODE SCHOTTKY 40V 1.0A SOT23-3

ZHCS1000TA

Manufacturer Part NumberZHCS1000TA
DescriptionDIODE SCHOTTKY 40V 1.0A SOT23-3
ManufacturerDiodes Zetex
ZHCS1000TA datasheet
 


Specifications of ZHCS1000TA

Voltage - Forward (vf) (max) @ If500mV @ 1AVoltage - Dc Reverse (vr) (max)40V
Current - Average Rectified (io)1A (DC)Current - Reverse Leakage @ Vr100µA @ 30V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)12nsCapacitance @ Vr, F25pF @ 25V, 1MHz
Mounting TypeSurface MountPackage / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Rectifier TypeSchottky DiodeConfigurationSingle
Peak Rep Rev Volt40VAvg. Forward Curr (max)1.75
Rev Curr100uAPeak Non-repetitive Surge Current (max)12A
Forward Voltage0.6VOperating Temp Range-55C to 125C
Package TypeSOT-23Rev Recov Time12ns
Operating Temperature ClassificationMilitaryMountingSurface Mount
Pin Count3Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesZHCS1000TR  
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SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE ”SuperBAT”
ISSUE 2 - OCTOBER 1997
FEATURES:
High current capability
Low V
F
APPLICATIONS:
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
PARTMARKING DETAILS : ZS1
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current
Forward Voltage @ I
= 1000mA(typ)
F
Average Peak Forward Current;D.C.= 50%
Non Repetitive Forward Current t 100 s
Power Dissipation at T
= 25° C
amb
Storage Temperature Range
Junction Temperature
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
SYMBOL
Reverse Breakdown
V
(BR)R
Voltage
Forward Voltage
V
F
Reverse Current
I
R
Diode Capacitance
C
D
Reverse Recovery
t
rr
Time
*Measured under pulsed conditions. Pulse width= 300 s. Duty cycle 2%
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
t 10ms
P
tot
T
stg
T
j
= 25° C unless otherwise stated).
amb
MIN.
TYP.
MAX.
40
60
240
270
265
290
305
340
355
400
390
450
425
500
495
600
420
50
100
25
12
ZHCS1000
1
C
1
A
3
3
SOT23
VALUE
UNIT
40
V
1000
mA
425
mV
1750
mA
12
A
5.2
A
500
mW
-55 to + 150
° C
125
° C
UNIT
CONDITIONS.
V
I
= 300 A
R
mV
I
= 50mA*
F
mV
I
= 100mA*
F
mV
I
= 250mA*
F
mV
I
= 500mA*
F
mV
I
= 750mA*
F
mV
I
= 1000mA*
F
mV
I
= 1500mA*
F
mV
I
= 1000mA,T
= 100° C
F
a
*
V
= 30V
A
R
pF
f= 1MHz,V
= 25V
R
ns
switched from
I
= 500mA to I
F
R
500mA
Measured at I
= 50mA
R
2
=

ZHCS1000TA Summary of contents

  • Page 1

    SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE ”SuperBAT” ISSUE 2 - OCTOBER 1997 FEATURES: High current capability Low V F APPLICATIONS: Mobile telecomms, PCMIA & SCSI DC-DC Conversion PARTMARKING DETAILS : ZS1 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward ...

  • Page 2

    ZHCS1000 10 1 100m 10m 1m 0 0.1 0.2 0 Forward Voltage ( 0.8 Typical DC 0.6 D=0.5 D=0.2 0.4 D=0.1 0.2 D=0. Case Temperature (°C) I F(av) ...

  • Page 3

    MAXIMUM TRANSIENT THERMAL RESISTANCE * Reference above figure, devices were mounted on a 15mmx15mm ceramic substrate. TYPICAL CHARACTERISTICS ZHCS1000 ...