DIODE SCHOTTKY 40V 2A SOT23-6

ZHCS2000TA

Manufacturer Part NumberZHCS2000TA
DescriptionDIODE SCHOTTKY 40V 2A SOT23-6
ManufacturerDiodes Zetex
ZHCS2000TA datasheet
 


Specifications of ZHCS2000TA

Voltage - Forward (vf) (max) @ If500mV @ 2AVoltage - Dc Reverse (vr) (max)40V
Current - Average Rectified (io)2A (DC)Current - Reverse Leakage @ Vr300µA @ 30V
Diode TypeSchottkySpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)5.5nsCapacitance @ Vr, F50pF @ 25V, 1MHz
Mounting TypeSurface MountPackage / CaseSOT-23-6
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesZHCS2000TR
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40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE
SUMMARY
V
=40V; I
= 2A
R
C
DESCRIPTION
A surface mount Schottky Barrier Diode featuring low forward voltage drop
suitable for high frequency rectification and reverse voltage protection.
FEATURES
High current capability
Low forward voltage (V
max=0.5V)
F
Fast recovery time
Small package size
APPLICATIONS
Mobile telecomms, PCMIA & SCSI
DC-DC Conversion
High frequency rectification
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
(inches)
(mm)
ZHCS2000TA
7
8mm embossed
ZHCS2000TC
13
8mm embossed
DEVICE MARKING
ZS20
ISSUE 2 - DECEMBER 2002
ZHCS2000
SOT23-6
C
A
QUANTITY
PER REEL
C
C
3000 units
A
10000 units
Top View
1
C
C
A

ZHCS2000TA Summary of contents

  • Page 1

    ... F Fast recovery time Small package size APPLICATIONS Mobile telecomms, PCMIA & SCSI DC-DC Conversion High frequency rectification ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH (inches) (mm) ZHCS2000TA 7 8mm embossed ZHCS2000TC 13 8mm embossed DEVICE MARKING ZS20 ISSUE 2 - DECEMBER 2002 ZHCS2000 SOT23 QUANTITY ...

  • Page 2

    ZHCS2000 ABSOLUTE MAXIMUM RATINGS. PARAMETER Continuous Reverse Voltage Forward Current Average Peak Forward Current;D.C.=50% Non Repetitive Forward Current t 100 s t 10ms Power Dissipation at T =25°C amb Storage Temperature Range Junction Temperature THERMAL RESISTANCE PARAMETER Junction to Ambient ...

  • Page 3

    TYPICAL CHARACTERISTICS +V 12R5 Negative Input Pulse 1nS Rise Time DUT 50R to 12R5 Pulse Transformer Reverse Recovery Time Circuit ISSUE 2 - DECEMBER 2002 To 50R t1 Scope 1nS Rise Time 12R5 Duty Cycle 3 ZHCS2000 ...

  • Page 4

    ZHCS2000 ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Reverse Breakdown V (BR)R Voltage Forward Voltage V F Reverse Current I R Diode Capacitance C D Reverse Recovery t rr Time *Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2% = ...

  • Page 5

    TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2002 ZHCS2000 5 ...

  • Page 6

    ZHCS2000 ISSUE 2 - DECEMBER 2002 6 ...

  • Page 7

    ISSUE 2 - DECEMBER 2002 ZHCS2000 7 ...

  • Page 8

    ZHCS2000 PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min A 0.90 1.45 0.35 A1 0.00 0. 0.90 1.30 0.035 b 0.35 0.50 0.014 C 0.09 0.20 0.0035 D 2.80 3.00 ...