1SS355TE-17 Rohm Semiconductor, 1SS355TE-17 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single 1SS355TE-17
Manufacturer Part Number
1SS355TE-17
Description
DIODE 80V 100MA SOD-323
Manufacturer
Rohm Semiconductor
Specifications of 1SS355TE-17
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Voltage - Dc Reverse (vr) (max)
80V
Current - Average Rectified (io)
100mA
Current - Reverse Leakage @ Vr
100nA @ 80V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
3pF @ 0.5V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-90, SOD-323F
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
90V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
225mA
Diode
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
225 mA
Max Surge Current
500 mA
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Diode Case Style
SOD-323
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1SS355TE-17TR
Available stocks
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Diodes
Switching diode
1SS355
High speed switching
1) Ultra small mold type.(UMD2)
2) High reliability.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current
Average rectified forward current
Surge current （t=1s）
Junction temperature
Storage temperature
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
Parameter
Parameter
Symbol
V
Ct
trr
I
R
F
Symbol
I
Tstg
V
surge
V
I
Io
Tj
FM
RM
R
Taping specification (Unit : mm)
JEITA : SC-90/A
JEDEC : S0D-323
Min.
ROHM : UMD2
Dimensions (Unit : mm)
-
-
-
-
4.0±0.1
1.40±0.1
dot (year week factory)
1.25±0.1
0.3±0.05
Typ.
-55 to +150
-
-
-
-
2.0±0.05
Limits
225
100
500
150
90
80
Max.
4.0±0.1
1.2
0.1
3
4
0.1±0.1
0.05
φ1.55±0.05
0.7±0.2
0.1
Unit
µA
pF
ns
V
φ1.05
Unit
mA
mA
mA
℃
℃
V
V
I
V
V
V
F
R
R
R
=100mA
=80V
=0.5V , f=1MHz
=6V , IF=10mA , RL=100Ω
Land size figure (Unit : mm)
Structure
UMD2
0.9MIN.
Conditions
Rev.C
0.3±0.1
1.0±0.1
1SS355
1/3
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1SS355TE-17 Summary of contents
Diodes Switching diode 1SS355 Applications High speed switching Features 1) Ultra small mold type.(UMD2) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current Average rectified forward current Surge ...
Diodes Electrical characteristic curves (Ta=25°C) 100 Ta=125℃ 10 Ta=75℃ Ta=25℃ Ta=-25℃ 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 950 Ta=25 IF=100mA 940 n=30pcs 930 920 910 AVE:922.4mV 900 ...
Diodes 0.2 DC 0.15 D=1/2 Sin(θ＝180 D=t/T VR=40V T Tj=150℃ 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 0.20 DC 0.15 D=1/2 Sin(θ＝180 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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