RLS245TE-11 Rohm Semiconductor, RLS245TE-11 Datasheet

DIODE 220V 200MA LL-34

RLS245TE-11

Manufacturer Part Number
RLS245TE-11
Description
DIODE 220V 200MA LL-34
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RLS245TE-11

Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.5V @ 200mA
Voltage - Dc Reverse (vr) (max)
220V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
10µA @ 220V
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
75ns
Capacitance @ Vr, F
3pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Forward Current If(av)
200mA
Repetitive Reverse Voltage Vrrm Max
250V
Forward Voltage Vf Max
1.5V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
625mA
Diode
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
220 V
Forward Continuous Current
200 mA
Max Surge Current
1 A
Configuration
Single
Recovery Time
75 ns
Forward Voltage Drop
1.5 V
Maximum Reverse Leakage Current
10 uA
Operating Temperature Range
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RLS245TE-11TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RLS245TE-11
Manufacturer:
Rohm Semiconductor
Quantity:
62 500
Part Number:
RLS245TE-11
Manufacturer:
RENESA
Quantity:
9 121
Part Number:
RLS245TE-11
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Diodes
Leadless high voltage switching diode
RLS245
High voltage switching
General purpose rectification
1) Ultra small. (LLDS)
2) For surface mounting.
3) High voltage and high reliability.
Silicon epitaxial planar
Re
Re
Forw
Ave
Su
Po
Ju
S
F
Reve
Capacitance between terminals
Reverse recover
Applications
Features
Construction
Absolute maximum ratings (Ta=25 C)
torage temperature
Electrical characteristics (Ta=25 C)
orward voltage
nction temperature
rge current 1s
wer dissipation
verse voltage (repetitive peak)
verse voltage (DC)
rage rectified forward current
ard current
rse current
Parameter
Parameter
y time
Symbol
Tstg
I
V
surge
I
V
Io
Tj
FM
P
RM
R
Symbol
Trr
V
Ct
I
R
F
External dimensions (Unit : mm)
Land size figure (Unit : mm)
Taping specifications
-65 to +175
Min.
-
-
-
-
Limits
1000
250
220
625
200
300
175
Typ.
-
-
-
-
Max.
1.5
3.0
10
75
Unit
m
mA
mA
mA
V
V
W
Unit
μA
pF
ns
V
I
V
V
I
F
R
R
R
=200mA
=20mA,I
=220V
=0V , f=1MHz
Structure
F
=20mA,RL=50
Conditions
Rev.A
RLS245
1/2

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RLS245TE-11 Summary of contents

Page 1

Diodes Leadless high voltage switching diode RLS245 Applications High voltage switching General purpose rectification Features 1) Ultra small. (LLDS) 2) For surface mounting. 3) High voltage and high reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25 C) Parameter Symbol ...

Page 2

Diodes Electrical characteristic curves (Ta=25 C) RLS245 Rev.A 2/2 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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