RB521S-30TE61 Rohm Semiconductor, RB521S-30TE61 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RB521S-30TE61
Manufacturer Part Number
RB521S-30TE61
Description
DIODE SCHOTTKY 30V 200MA SOD-523
Manufacturer
Rohm Semiconductor
Specifications of RB521S-30TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
500mV @ 200mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
30µA @ 10V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
200mA
Forward Voltage Vf Max
500mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A
Max Surge Current
1 A
Configuration
Single
Forward Voltage Drop
0.5 V
Maximum Reverse Leakage Current
30 uA
Operating Temperature Range
+ 125 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RB521S-30TE61TR
Available stocks
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
Part Number:
RB521S-30TE61
General rectification
1)Ultra small mold type. （ EMD2）
2)Low V
3)High reliability
Silicon epitaxial planar
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz ・1cyc)
Junction temperature
Storage temperature
Forward voltage
Reverse current
RB521S-30
Schottky Barrier Diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
F
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
I
V
FSM
V
Tj
Io
I
R
R
F
Dimensions (Unit : mm)
JEITA : SC-79
JEDEC :SOD-523
ROHM : EMD2
Min.
0.90±0.05
-
-
0.8±0.05
0.95±0.06
0.3±0.05
4.0±0.1
dot (year week factory)
-40 to +125
0
Limits
1/3
200
125
Typ.
30
1
-
-
2.0±0.05
Empty pocket
空ポケット
Max.
0.50
30
4.0±0.1
0.6±0.1
φ1.5±0.05
φ1.55±0.05
Unit
Unit
mA
μA
°C
°C
V
A
V
0.12±0.05
I
V
F
2.0±0.05
=200mA
R
=10V
Structure
Land size figure (Unit : mm)
Conditions
EMD2
φ0.5
Data Sheet
0.8
2011.03 - Rev.F
0.2
0.2±0.05
0.75±0.05
0.76±0.05
Related parts for RB521S-30TE61
RB521S-30TE61 Summary of contents
... Schottky Barrier Diode RB521S-30 Applications General rectification Features 1)Ultra small mold type. （ EMD2） 2)Low V F 3)High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz ・1cyc) ...
... RB521S-30 1000 Ta=125℃ 100 Ta=75℃ Ta=-25℃ 0.1 Ta=25℃ 0.01 0.001 0 100 200 300 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 450 Ta=25℃ IF=200mA 440 n=10pcs 430 420 410 AVE:421.0mV 400 VF DISPERSION MAP 20 Ifsm 15 8.3ms 10 5 AVE:5.60A 0 IFSM DISPERSION MAP ...
... RB521S-30 0 0.4 D=t/T DC VR=15V T 0.3 D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE：Ta(℃) Derating Curveﾞ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) 0 125 CASE TEMPARATURE：Tc(℃) ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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