RB520S-40TE61 Rohm Semiconductor, RB520S-40TE61 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Single RB520S-40TE61
Manufacturer Part Number
RB520S-40TE61
Description
DIODE SCHOTTKY 40V 200MA SOD523
Manufacturer
Rohm Semiconductor
Specifications of RB520S-40TE61
Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
550mV @ 100mA
Voltage - Dc Reverse (vr) (max)
40V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
10µA @ 40V
Speed
Small Signal =< 200mA (Io), Any Speed
Mounting Type
Surface Mount
Package / Case
SC-79, SOD-523
Repetitive Reverse Voltage Vrrm Max
40V
Forward Current If(av)
200mA
Forward Voltage Vf Max
390mV
Forward Surge Current Ifsm Max
1A
Diode Case Style
SOD-523
No. Of Pins
2
Svhc
No SVHC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
RB520S-40TE61
Rectifying small power
1)Ultra small mold type. (EMD2)
2)Low I
3)High reliability
Silicon epitaxial
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
Junction temperature
Storage temperature
Forward voltage
Reverse current
RB520S-40
Schottky Barrier Diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
Tstg
V
I
V
FSM
V
V
Io
Tj
I
I
RM
R
R
R
F
F
Dimensions (Unit : mm)
JEITA : SC-79
JEDEC :SOD-523
ROHM : EMD2
Min.
0.90±0.05
-
-
-
-
0.8±0.05
0.95±0.06
0.3±0.05
4.0±0.1
dot (year week factory)
-40 to +125
0
Limits
200
125
Typ.
40
40
1
-
-
-
-
2.0±0.05
Empty pocket
空ポケット
1/3
Max.
0.39
0.55
10
1
4.0±0.1
0.6±0.1
φ1.5±0.05
φ1.55±0.05
Unit
Unit
mA
μA
μA
°C
°C
V
V
A
V
V
0.12±0.05
I
I
V
V
F
F
2.0±0.05
=10mA
=100mA
R
R
=10V
=40V
Land size figure (Unit : mm)
Structure
φ0.5
EMD2
Conditions
Data Sheet
0.8
2011.03 - Rev.E
0.2
0.2±0.05
0.75±0.05
0.76±0.05
Related parts for RB520S-40TE61
RB520S-40TE61 Summary of contents
... Schottky Barrier Diode RB520S-40 Applications Rectifying small power Features 1)Ultra small mold type. (EMD2) 2)Low I R 3)High reliability Construction Silicon epitaxial Taping specifications (Unit : mm) Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak ...
... RB520S-40 1000 Ta=125℃ 100 Ta=75℃ Ta=-25℃ 0.1 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 510 Ta=25℃ IF=100mA 500 n=30pcs 490 480 AVE:491.2mV 470 460 VF DISPERSION MAP 30 25 Ifsm 20 8.3ms 15 AVE:5.60A IFSM DISPERSION MAP ...
... RB520S-40 0 0.4 t D=t/T DC VR=20V Tj=125℃ T 0.3 D=1/2 0.2 0.1 Sin(θ＝180 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curve (Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0.4 D=t/T VR=20V DC T Tj=125℃ 0.3 D=1/2 0.2 0.1 Sin(θ＝180) ...
ROHM Co., Ltd. All rights reserved Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ Notice ...
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