RSX101VA-30TR Rohm Semiconductor, RSX101VA-30TR Datasheet

DIODE SCHOTTKY 30V 1A TUMD2

RSX101VA-30TR

Manufacturer Part Number
RSX101VA-30TR
Description
DIODE SCHOTTKY 30V 1A TUMD2
Manufacturer
Rohm Semiconductor
Datasheet

Specifications of RSX101VA-30TR

Diode Type
Schottky
Voltage - Forward (vf) (max) @ If
470mV @ 1A
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
200µA @ 30V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
TUMD2
Repetitive Reverse Voltage Vrrm Max
30V
Forward Current If(av)
1A
Forward Voltage Vf Max
470mV
Forward Surge Current Ifsm Max
5A
Operating Temperature Range
-40°C To +150°C
Diode Case
RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Diodes
Schottky barrier diode
RSX101VA-30
General rectification
1) Small mold type. (TUMD2)
2) Low V
3) High reliability.
Silicon epitaxial planar
R
Revers e voltage (DC)
A
F
J
S
F
Revers e current
Applications
Features
Construction
unction tem perature
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
verage rectified forward current
orward current s urge peak ( 60Hz ・ 1cyc )
orward voltage
torage tem perature
evers e voltage (repetitive peak)
F
Param eter
Param eter
Sym bol
I
I
V
R
R
F
1
2
ROHM : TUMD2
External dimensions (Unit : mm)
Taping specifications (Unit : mm)
dot (year week factory) + day
0.8±0.05
1.3±0.05
Min.
-
-
-
Sym bol
4.0±0.1
1.43±0.05
Ts tg
V
I
FSM
V
Io
Tj
RM
R
0.43
Typ.
15
40
2.0±0.05
Max.
0.47
200
0.6±0.2
    0.1
40
4.0±0.1
  
0.17±0.1
-40 to +150
0.05
φ1.55±0.1
      0
Lim its
150
30
30
1
5
Unit
µA
µA
V
φ1.0±0.2
     0
I
V
V
F
R
R
=1A
=5V
=30V
Structure
Land size figure (Unit : mm)
TUMD2
Unit
V
V
A
A
RSX101VA-30
Conditions
0.25±0.05
1.1
0.9±0.08
Rev.B
1/3

Related parts for RSX101VA-30TR

RSX101VA-30TR Summary of contents

Page 1

... Sym bol FSM 150 Tj -40 to +150 Ts tg Min. Typ. Max. Unit - 0.43 0. µ 200 µA RSX101VA-30 Land size figure (Unit : mm) 1.1 TUMD2 Structure 0.25±0.05 φ1.0±0.2      0 0.9±0.08 Unit ℃ ℃ Conditions =30V R Rev.B 1/3 ...

Page 2

... DISPERSION MAP 1000 Mounted on epoxy board IM=10mA IF=0.2A Rth(j-a) time 1ms 300us 100 Rth(j-c) 10 100 0.001 0.01 0 100 TIME:t(s) Rth-t CHARACTERISTICS RSX101VA-30 1000 f=1MHz 100 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 200 Ta=25℃ 190 f=1MHz 180 VR=0V n=10pcs 170 160 150 ...

Page 3

... CHARACTERISTICS 2 D=t VR=15V Tj=150℃ T D=1/2 1.5 1 0.5 Sin(θ=180 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curve゙(Io-Ta) RSX101VA- 2 D=t VR=15V Tj=150℃ T 1.5 D=1/2 1 0.5 Sin(θ=180) 0 150 100 125 CASE TEMPARATURE:Tc(℃) Derating Curve゙(Io-Tc) Rev ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

Related keywords