BAS21AHT1G ON Semiconductor, BAS21AHT1G Datasheet

DIODE SWITCH LL 250V SOD-323

BAS21AHT1G

Manufacturer Part Number
BAS21AHT1G
Description
DIODE SWITCH LL 250V SOD-323
Manufacturer
ON Semiconductor
Datasheet

Specifications of BAS21AHT1G

Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
250V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
40nA @ 200V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Surface Mount
Package / Case
SC-76, SOD-323, UMD2
Product
Switching Diodes
Peak Reverse Voltage
250 V
Forward Continuous Current
0.2 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.04 uA
Operating Temperature Range
- 55 C to + 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAS21AHT1G
BAS21AHT1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21AHT1G
Manufacturer:
ON Semiconductor
Quantity:
48 412
Part Number:
BAS21AHT1G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
BAS21AHT1G
Quantity:
5 000
BAS21AHT1G
Low Leakage
Switching Diode
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 Minimum Pad
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
 Semiconductor Components Industries, LLC, 2010
August, 2010 - - Rev. 1
I
Symbol
Symbol
FM(surge)
T
Compliant
These Devices are Pb- -Free, Halogen Free/BFR Free and are RoHS
V
R
J
V
RRM
P
, T
I
θJA
F
R
D
stg
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Current
Peak Forward Surge Current
Total Device Dissipation FR--5 Board,
(Note 1) T
Thermal Resistance,
Junction and Storage Temperature
Range
Derate above 25C
Junction--to--Ambient
Characteristic
A
= 25C
Rating
--55 to +150
Value
Max
1.57
250
250
200
625
200
635
1
mW/C
mAdc
mAdc
C/W
Unit
Unit
Vdc
Vdc
mW
C
†For information on tape and reel specifications,
BAS21AHT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*Date Code orientation may vary depending
Device
upon manufacturing location.
(Note: Microdot may be in either location)
1
CASE 477
SOD- -323
STYLE 1
ORDERING INFORMATION
SWITCHING DIODE
AA
M
G
CATHODE
LOW LEAKAGE
http://onsemi.com
1
2
(Pb--Free)
SOD--323
Package
= Device Code
= Date Code*
= Pb--Free Package
Publication Order Number:
ANODE
2
3000/Tape & Reel
MARKING
DIAGRAM
Shipping
BAS21AHT1/D
AA M G
G

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BAS21AHT1G Summary of contents

Page 1

... Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device BAS21AHT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Reverse Voltage Leakage Current (V = 200 Vdc 200 Vdc 150 Reverse Breakdown Voltage (I = 100 mAdc) BR Forward Voltage (I = 100 mAdc ...

Page 3

... NOTE 5 NOTE 3 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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