MBR0530T1G ON Semiconductor, MBR0530T1G Datasheet - Page 2

• Manufacturer Part Number: MBR0530T1G
• Description: DIODE SCHOTTKY 30V 0.5A SOD123
• Manufacturer: ON Semiconductor

Specifications of MBR0530T1G

• Voltage - Forward (vf) (max) @ If: 430mV @ 500mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 500mA
• Current - Reverse Leakage @ Vr: 130µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.5 A
• Max Surge Current: 5.5 A
• Configuration: Single
• Forward Voltage Drop: 0.43 V
• Maximum Reverse Leakage Current: 130 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR0530T1GOSTR

1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Lead
Maximum Instantaneous Forward Voltage (Note 2)
(i
(i
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, T
(V
F
F
0.01
R
= 0.1 Amps, T
= 0.5 Amps, T
0.1
= 15 V, T
1
0.15
T
J
= 125°C
0.2
C
= 25°C)
Figure 1. Typical Forward Voltage
J
J
v
= 25°C)
= 25°C)
0.25
F
, INSTANTANEOUS VOLTAGE (VOLTS)
C
75°C
= 25°C)
0.3
0.35
180
160
140
120
100
25°C
80
60
40
20
Rating
0
0.4
TYPICAL CAPACITANCE AT 0 V = 170 pF
0.45
5
Figure 3. Typical Capacitance
- 40°C
V
R
0.5
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
10
0.55
2
15
1000
100
10
10
1
4
20
0
5
25
Figure 2. Typical Reverse Current
Symbol
R
R
v
I
qJA
qJL
10
R
F
V
R
, REVERSE VOLTAGE (VOLTS)
30
15
T
75°C
25°C
J
20
= 125°C
Value
0.375
0.43
206
150
130
20
25
30
35
°C/W
°C/W
Unit
mA
V
40