MURA260T3G ON Semiconductor, MURA260T3G Datasheet - Page 3

• Manufacturer Part Number: MURA260T3G
• Description: DIODE ULTRA FAST 2A 600V SMA
• Manufacturer: ON Semiconductor

Specifications of MURA260T3G

• Voltage - Forward (vf) (max) @ If: 1.45V @ 2A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 600 V
• Forward Voltage Drop: 1.45 V
• Recovery Time: 75 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 30 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MURA260T3GOS; MURA260T3GOS; MURA260T3GOSTR

5
4
3
2
1
0
20
15
10
25
60
5
0
SQUARE WAVE
0
dc
4
80
Figure 7. Current Derating, Lead
8
V
Figure 5. Typical Capacitance
T
R
L
, REVERSE VOLTAGE (VOLTS)
, LEAD TEMPERATURE (°C)
100
12
16
120
4.5
3.5
2.5
1.5
0.5
20
4
3
2
1
0
0
24
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
140
I
F(AV)
0.5
28
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
160
32
SQUARE WAVE
1
http://onsemi.com
36
MURA260T3
180
1.5
40
3
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
30
25
20
15
10
5
0
1
0
0
0
SQUARE
2.5
dc
WAVE
4
20
dc
Figure 8. Current Derating, Ambient
Figure 6. Maximum Capacitance
(FR−4 Board with Minimum Pad)
3
8
V
T
40
A
R
, AMBIENT TEMPERATURE (°C)
, REVERSE VOLTAGE (VOLTS)
12
60
3.5
16
80
20
100
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 27 pF
24
120
28
140
32
160
36
180
40