1N5822RLG ON Semiconductor, 1N5822RLG Datasheet - Page 7

• Manufacturer Part Number: 1N5822RLG
• Description: DIODE SCHOTTKY 40V 3A DO201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5822RLG

• Voltage - Forward (vf) (max) @ If: 525mV @ 3A
• Voltage - Dc Reverse (vr) (max): 40V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2mA @ 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Rectifier Type: Schottky Diode
• Configuration: Single
• Peak Rep Rev Volt: 40V
• Avg. Forward Curr (max): 3
• Rev Curr: 2000uA
• Peak Non-repetitive Surge Current (max): 80A
• Forward Voltage: 0.95@9.4AV
• Operating Temp Range: -65C to 125C
• Package Type: DO-201AD
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Product: Schottky Diodes
• Peak Reverse Voltage: 40 V
• Forward Continuous Current: 3 A
• Max Surge Current: 80 A
• Forward Voltage Drop: 0.95 V @ 9.4 A
• Maximum Reverse Leakage Current: 2000 uA
• Operating Temperature Range: - 65 C to + 125 C
• Mounting Style: Through Hole
• Current, Forward: 3 A
• Current, Reverse: 20 mA
• Current, Surge: 80 A
• Primary Type: Schottky Barrier
• Temperature, Junction, Maximum: +125 °C
• Temperature, Operating: -65 to +125 °C
• Voltage, Forward: 0.525 V
• Voltage, Reverse: 40 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 1N5822RLGOSTR

0.07
0.05
500
300
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
70
50
30
20
10
0
0.5
0.1
T
f = 1.0 MHz
J
0.7
v
= 25°C
0.2
F
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 7. Typical Forward Voltage
1.0
Figure 10. Typical Capacitance
0.3
T
V
0.4
J
R
= 100°C
, REVERSE VOLTAGE (VOLTS)
2.0
0.5
0.6
3.0
0.7
5.0
0.8
25°C
7.0
0.9
1.0
10
1N5820
1N5820, 1N5821, 1N5822
1.1
1.2
20
1N5822
http://onsemi.com
1N5821
1.3
30
1.4
7
majority carrier conduction, it is not subject to junction di‐
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana‐
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 10.)
0.05
0.02
0.01
100
100
5.0
2.0
1.0
0.5
0.2
0.1
Since current flow in a Schottky rectifier is the result of
70
50
30
20
10
50
20
10
1.0
0
100°C
NOTE 6 — HIGH FREQUENCY OPERATION
T
f = 60 Hz
25°C
75°C
L
T
Figure 8. Maximum Non-Repetitive Surge
J
4.0
= 75°C
= 125°C
2.0
SURGE APPLIED AT RATED LOAD CONDITIONS
Figure 9. Typical Reverse Current
8.0
3.0
V
R
12
, REVERSE VOLTAGE (VOLTS)
5.0
NUMBER OF CYCLES
16
7.0 10
1 CYCLE
Current
20
24
20
28
30
32
1N5820
1N5821
1N5822
50 70
36
100
40