MBRS2H100T3G ON Semiconductor, MBRS2H100T3G Datasheet - Page 7

• Manufacturer Part Number: MBRS2H100T3G
• Description: DIODE SCHOTTKY 2A 100V SMB
• Manufacturer: ON Semiconductor

Specifications of MBRS2H100T3G

• Voltage - Forward (vf) (max) @ If: 790mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 8µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 2 A
• Max Surge Current: 130 A
• Configuration: Single
• Forward Voltage Drop: 0.79 V
• Maximum Reverse Leakage Current: 8 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBRS2H100T3G; MBRS2H100T3GOSTR

L
H
E
E
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
b
c
*For additional information on our Pb−Free strategy and soldering
D
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
A1
PACKAGE DIMENSIONS
SOLDERING FOOTPRINT*
http://onsemi.com
CASE 403D−02
ISSUE F
SMA
0.157
4.0
7
A
0.0787
NOTES:
2.0
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.
Y14.5M, 1982.
DIM
SCALE 8:1
H
A1
A
D
E
b
c
L
E
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MIN
0.0787
2.0
MILLIMETERS
inches
mm
NOM
2.10
0.10
1.45
0.28
2.60
4.32
5.21
1.14
MAX
2.20
0.15
1.63
0.41
2.92
4.57
5.59
1.52
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
MIN
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
0.087
0.006
0.064
0.016
0.115
0.180
0.220
0.060
MAX