1N5406RLG ON Semiconductor, 1N5406RLG Datasheet - Page 3

• Manufacturer Part Number: 1N5406RLG
• Description: DIODE STD REC 3A 600V DO201AD
• Manufacturer: ON Semiconductor

Specifications of 1N5406RLG

• Voltage - Forward (vf) (max) @ If: 1V @ 3A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Current, Forward: 3 A
• Current, Reverse: 50 μA
• Current, Surge: 200 A
• Package Type: DO-210AD
• Primary Type: Rectifier
• Speed, Switching: Standard
• Temperature, Junction, Maximum: +150 °C
• Temperature, Operating: -65 to +150 °C
• Voltage, Forward: 1 V
• Voltage, Reverse: 600 V
• Rectifier Type: Switching Diode
• Configuration: Single
• Peak Rep Rev Volt: 600V
• Avg. Forward Curr (max): 3A
• Rev Curr: 10uA
• Peak Non-repetitive Surge Current (max): 200A
• Forward Voltage: 1V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: 1N5406RLGOSTR

mountings shown is to be used as typical guideline values for preliminary
engineering or in case the tie point temperature cannot be measured.
Data shown for thermal resistance junction−to−ambient (R
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Vector Push−In Terminals T−28
Copper Surface area is small
P.C. Board Where Available
MOUNTING METHOD 1
MOUNTING METHOD 2
Mounting
L
L
Method
NOTE 1 — AMBIENT MOUNTING DATA
TYPICAL VALUES FOR R
1
2
3
L
L
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1/8
50
58
Lead Length, L (IN)
3
1/4
51
59
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É É
É É
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28
IN STILL AIR
MOUNTING METHOD 3
1/2
53
Board Ground Plane
61
Copper Surface
P.C. Board with
1−1/2” x 1−1/2”
3/4
63
55
L = 1/2”
°C/W
°C/W
°C/W
R
qJA
qJA
) for the