MBR10100G ON Semiconductor, MBR10100G Datasheet - Page 2

• Manufacturer Part Number: MBR10100G
• Description: DIODE SCHOTTKY 100V 10A TO220AC
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBR10100G

• Voltage - Forward (vf) (max) @ If: 800mV @ 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 10A
• Current - Reverse Leakage @ Vr: 100µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: TO-220-2, TO-220AC
• Product: Schottky Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 10 A
• Max Surge Current: 150 A
• Configuration: Single
• Forward Voltage Drop: 0.95 V @ 20 A
• Maximum Reverse Leakage Current: 100 uA
• Operating Temperature Range: - 65 C to + 175 C
• Mounting Style: Through Hole
• Current, Forward: 10 A
• Current, Reverse: 6 mA
• Current, Surge: 150 A
• Package Type: TO-220AC
• Primary Type: Schottky Barrier
• Resistance, Thermal, Junction To Case: 2 °C/W
• Temperature, Junction, Maximum: +175 °C
• Temperature, Operating: -65 to +175 °C
• Voltage, Forward: 0.8 V
• Voltage, Reverse: 100 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBR10100GOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current (Rated V
Peak Repetitive Forward Current
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient
Maximum Instantaneous Forward Voltage (Note 2)
Maximum Instantaneous Reverse Current (Note 2)
Working Peak Reverse Voltage
DC Blocking Voltage
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated dc Voltage, T
(Rated dc Voltage, T
F
F
F
F
= 10 Amps, T
= 10 Amps, T
= 20 Amps, T
= 20 Amps, T
R
, Square Wave, 20 kHz) T
C
C
C
C
= 125°C)
= 25°C)
= 125°C)
= 25°C)
C
C
= 125°C)
= 25°C)
R
)
Rating
C
= 133°C
R
) T
C
= 133°C
http://onsemi.com
2
R
R
v
i
qJC
qJA
R
F
Symbol
V
V
I
I
dv/dt
I
I
F(AV)
FRM
RRM
T
RWM
FSM
RRM
V
T
stg
R
J
D
/dT
J
1080
80
< 1/R
0.85
0.95
0.10
2.0
0.7
0.8
6.0
*65 to +175
*65 to +175
60
qJA
10,000
.
MBR
1090
150
0.5
90
10
20
10100
100
°C/W
°C/W
V/ms
Unit
mA
°C
°C
V
A
A
A
A
V