ES2D-E3/52T Vishay, ES2D-E3/52T Datasheet - Page 3

• Manufacturer Part Number: ES2D-E3/52T
• Description: DIODE ULTRA FAST 2A 200V SMB
• Manufacturer: Vishay

Specifications of ES2D-E3/52T

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 900mV @ 2A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 10µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 30ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.9 V
• Recovery Time: 30 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 50 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 3A
• Forward Voltage Vf Max: 900mV
• Reverse Recovery Time Trr Max: 20ns
• Forward Surge Current Ifsm Max: 100A
• Rectifier Type: Switching Diode
• Peak Rep Rev Volt: 200V
• Avg. Forward Curr (max): 2A
• Rev Curr: 10uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.9V
• Operating Temp Range: -55C to 150C
• Package Type: SMB
• Rev Recov Time: 30ns
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ES2D-E3/52TGITR

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88589
Revision: 04-Jul-07
10000
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.1
0
Percent of Rated Peak Reverse Voltage (%)
0.3
Tj = 125 °C
Instantaneous Forward Voltage (V)
20
Tj = 150 °C
0.5
Tj = 150 °C
Tj = 125 °C
Tj = 100 °C
40
0.079 (2.06)
0.103 (2.62)
0.030 (0.76)
0.126 (3.20)
0.114 (2.90)
0.060 (1.52)
0.7
Tj = 25 °C
Tj = 25 °C
Tj = 100 °C
60
0.9
DO-214AB (SMC)
80
1.1
0.320 (8.13)
0.305 (7.75)
0.260 (6.60)
0.280 (7.11)
Cathode Band
100
1.3
0.008 (0.2)
0 (0)
0.246 (6.22)
0.220 (5.59)
0.012 (0.305)
0.006 (0.152)
(3.20 MIN.)
0.126 MIN.
30
20
10
50
40
0
0.1
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
Mounting Pad Layout
0.320 REF
Reverse Voltage (V)
0.060 MIN.
(1.52 MIN.)
1
0.185 MAX.
(4.69 MAX.)
ES3A thru ES3D
10
T
f = 1.0 MHz
V
j
sig
= 25 °C
= 50 mVp-p
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100
3