S1D-E3/5AT Vishay, S1D-E3/5AT Datasheet - Page 3

• Manufacturer Part Number: S1D-E3/5AT
• Description: DIODE GPP 1A 200V SMA DO-214AC
• Manufacturer: Vishay

Specifications of S1D-E3/5AT

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 1µA @ 200V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 1.8µs
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 1.8µs
• Forward Surge Current Ifsm Max: 30A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88711
Revision: 07-Apr-08
0.001
Figure 3. Typical Instantaneous Forward Characteristics
0.01
0.01
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V
20
0.8
0.065 (1.65)
0.049 (1.25)
T
0.060 (1.52)
0.030 (0.76)
J
0.090 (2.29)
0.078 (1.98)
= 125 °C
40
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T
For technical questions within your region, please contact one of the following:
1.2
T
J
J
T
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
= 25 °C
J
= 75 °C
60
DO-214AC (SMA)
1.6
80
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
Cathode Band
)
0.008 (0.203)
0 (0)
100
2.0
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
1000
0.066 (1.68)
100
100
0.060 (1.52)
10
10
MIN.
1
1
0.01
0.01
MIN.
Figure 6. Typical Transient Thermal Impedance
Mounting Pad Layout
Vishay General Semiconductor
Figure 5. Typical Junction Capacitance
0.1
0.1
(5.28) REF.
t - Pulse Duration (s)
Reverse Voltage (V)
0.208
S1(K, M)
Units Mounted on
0.20 x 0.20" (5.0 x 5.0 mm)
x 0.5 mil. Inches (0.013 mm)
Thick Copper Land Areas
1
1
0.074 (1.88)
MAX.
S1A thru S1M
T
f = 1.0 MHz
V
S1(A - J)
J
sig
= 25 °C
10
10
= 50 mVp-p
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100
100
3