BAT54HT1G Fairchild Semiconductor, BAT54HT1G Datasheet
BAT54HT1G
Manufacturer Part Number
BAT54HT1G
Description
DIODE SCHOTTKY 30V 200MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of BAT54HT1G
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
30 V
Forward Voltage Drop
0.8 V @ 0.1 A
Recovery Time
5 ns
Forward Continuous Current
0.2 A
Max Surge Current
0.6 A
Reverse Current Ir
2 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BAT54HT1G
Manufacturer:
ON
Quantity:
3 000
Company:
Part Number:
BAT54HT1G
Manufacturer:
ON Semiconductor
Quantity:
20 000
Part Number:
BAT54HT1G
Manufacturer:
ON/安森美
Quantity:
20 000
©2005 Fairchild Semiconductor Corporation
BAT54/A/C/S Rev. E1
BAT54/A/C/S
Schottky Diodes
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Electrical Characteristics
V
I
I
T
T
P
R
V
V
I
C
t
F(AV)
FSM
R
rr
STG
J
RRM
D
R
F
Symbol
Symbol
θJA
Symbol
T
3
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient
Breakdown Voltage
Forward Voltage
Reverse Leakage
Total Capacitance
Reverse Recovery Time
SOT-23
1
Pulse Width = 1.0 second
2
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
BAT54
BAT54C
T
a
= 25°C unless otherwise noted
1
L4P
= L4P
= L43
I
I
I
I
I
I
V
V
I
R
MARKING
R
F
F
F
F
F
F
R
R
L
3
= 0.1mA
= 1mA
= 10mA
= 30mA
= 100mA
= I
= 10µA
= 100Ω
= 25V
= 1V, f = 1.0MHz
BAT54A = L42
BAT54S = L44
R
= 10mA, I
2
1
Conditions
RR
= 1.0mA,
BAT54C
BAT54
-55 to +150
-55 to +150
Value
Value
Connection Diagram
1
200
600
290
430
30
1
3
3
Min.
2
2NC
30
1
1
Max.
240
320
400
500
0.8
5.0
10
2
3
3
BAT54A
BAT54S
February 2005
www.fairchildsemi.com
2
2
Unit
Unit
°C/W
mW
mA
mA
°C
°C
V
Units
mV
mV
mV
mV
µA
pF
ns
V
V
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BAT54HT1G Summary of contents
Page 1
... Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time rr ©2005 Fairchild Semiconductor Corporation BAT54/A/C/S Rev L4P 1 2 MARKING BAT54 = L4P BAT54A = L42 = L43 BAT54S = L44 BAT54C T = 25°C unless otherwise noted a Parameter Parameter T = 25° ...
Page 2
Typical Performance Characteristics Figure 1. Forward Voltage vs Temperature - - 100 0.0 0.1 0.2 0.3 0.4 0.5 V ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A FAST CEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...