BAS16HT1G Fairchild Semiconductor, BAS16HT1G Datasheet
BAS16HT1G
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BAS16HT1G Summary of contents
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... Symbol Parameter V Breakdown Voltage R V Forward Voltage F I Reverse Leakage R C Total Capacitance T t Reverse Recovery Time I rr © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev 25°C unless otherwise noted A Parameter Parameter T = 25°C unless otherwise noted A Test Conditions I = 5.0μ 0.1mA ...
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... Ta= 25°C 1.4 1.2 1 0.8 0 100 Forward Current, I Figure 5. Forward Voltage vs Forward Current 800mA © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 300 250 200 150 100 100 GENERAL RULE: The Reverse Current of a diode will approximately [uA] R Figure 2. Reverse Current vs Reverse Voltage ...
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... Ta= 25°C 3.5 3 2 Reverse Current [mA] IRR (Reverse Recovery Current Rloop = 100 Ohms Figure 1. Reverse Recovery Time vs Reverse Current TRR - IR 10mA vs 60mA © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 (Continued) 500 400 300 200 100 Figure 2. Average Rectified Current (I 500 ...
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... Physical Dimension © 2010 Fairchild Semiconductor Corporation BAS16HT1G Rev. A1 SOD-323 4 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. FRFET AccuPower Auto-SPM Global Power Resource Build it Now Green FPS CorePLUS Green FPS CorePOWER Gmax ...