MPG06M-E3/73 Vishay, MPG06M-E3/73 Datasheet - Page 3

• Manufacturer Part Number: MPG06M-E3/73
• Description: DIODE 1A 1000V MINI SMD MPG06
• Manufacturer: Vishay

Specifications of MPG06M-E3/73

• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Diode Type: Standard
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 600ns
• Mounting Type: Through Hole
• Package / Case: MPG06, Axial
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 600 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 40 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88682
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
10
0.1
10
1
1
0.4
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.6
Instantaneous Forward Voltage (V)
20
0.8
T
J
= 150 °C
40
1.0
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For technical questions within your region, please contact one of the following:
Pulse Width = 300 μs
T
T
1.2
T
J
J
J
1 % Duty Cycle
60
= 125 °C
= 75 °C
= 25 °C
T
J
= 25 °C
1.4
80
This datasheet is subject to change without notice.
1.6
0.025 (0.635)
0.023 (0.584)
100
1.8
0.100 (2.54)
0.090 (2.29)
DIA.
DIA.
MPG06
0.125 (3.18)
0.115 (2.92)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
100
100
0.1
10
10
1
1
0.01
1
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Fig. 6 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
MPG06A thru MPG06M
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
10
1
www.vishay.com/doc?91000
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
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p-p
100
100
3