SS1P4-E3/84A Vishay, SS1P4-E3/84A Datasheet

SS1P4-E3/84A

Manufacturer Part Number

SS1P4-E3/84A

Description

DIODE SCHOTTKY 1A 40V SMP

Manufacturer

Vishay

Series

eSMP™r

Datasheets

1.SS1P3-E385A.pdf (5 pages)

2.SS1P4-E384A.pdf (5 pages)

Specifications of SS1P4-E3/84A

Diode Type

Schottky

Voltage - Forward (vf) (max) @ If

530mV @ 1A

Voltage - Dc Reverse (vr) (max)

40V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

150µA @ 40V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Mounting Type

Surface Mount

Package / Case

DO-220AA

Product

Schottky Rectifiers

Peak Reverse Voltage

40 V

Forward Continuous Current

1 A

Max Surge Current

30 A

Configuration

Single

Forward Voltage Drop

0.45 V

Maximum Reverse Leakage Current

150 uA

Operating Temperature Range

- 55 C to + 150 C

Mounting Style

SMD/SMT

Repetitive Reverse Voltage Vrrm Max

40V

Forward Current If(av)

Forward Voltage Vf Max

530mV

Forward Surge Current Ifsm Max

30A

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Reverse Recovery Time (trr)

Capacitance @ Vr, F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SS1P4-E3/84A

Manufacturer:

VISHAY

Quantity:

12 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

SS1P4-E3/84A

Manufacturer:

VISHAY/威世

Quantity:

20 000

Current page: 1 of 5
Download datasheet (110Kb)

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling,

protection applications.

(Note: These devices are not AEC-Q101 qualified)

Notes:

(1)

(2)

Document Number: 88935

Revision: 08-Jul-09

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (fig. 1)

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

Non-repetitive avalanche energy at I

Voltage rate of change (rated V

Operating junction and storage temperature range

ELECTRICAL CHARACTERISTICS (T

PARAMETER

Maximum instantaneous

forward voltage

Maximum reverse current at rated V

Typical junction capacitance

Pulse test: 300 µs pulse width, 1 % duty cycle

Pulse test: Pulse width ≤ 40 ms

F(AV)

FSM

RRM

max.

(1)

dc-to-dc

eSMP

DO-220AA (SMP)

PDD-Americas@vishay.com, PDD-Asia@vishay.com,

High Current Density Surface Mount

For technical questions within your region, please contact one of the following:

converters,

)

Series

= 25 °C unless otherwise noted)

(2)

= 1.5 A, L = 10 mH, T

Schottky Barrier Rectifiers

0.40 V, 0.45 V

4.0 V, 1 MHz

30 V, 40 V

= 1.0 A

150 °C

10 mJ

TEST CONDITIONS

1.0 A

30 A

and

polarity

= 25 °C unless otherwise noted)

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

SYMBOL

FEATURES

MECHANICAL DATA

Case: DO-220AA (SMP)

Molding compound meets UL 94 V-0 flammability

rating.

Base P/N-M3 - halogen-free and RoHS compliant,

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

Polarity: Color band denotes the cathode end

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

• Compliant to RoHS directive 2002/95/EC and in

• Halogen-free according to IEC 61249-2-21

dV/dt

, T

F(AV)

FSM

RRM

losses

peak of 260 °C

accordance to WEEE 2002/96/EC

definition

suffix meets JESD 201 class 1A whisker test

STG

PDD-Europe@vishay.com

Vishay General Semiconductor

SS1P3

0.50

0.40

- 55 to + 150

10 000

150

1.0

SS1P3 & SS1P4

SS1P4

0.53

0.45

www.vishay.com

UNIT

V/µs

UNIT

°C

µA

Related parts for SS1P4-E3/84A

SS1P4-E3/84A Summary of contents

Page 1

... A TEST CONDITIONS SYMBOL ° 1 125 ° ° 125 ° MHz C J PDD-Europe@vishay.com SS1P3 & SS1P4 Vishay General Semiconductor SS1P3 SS1P4 1 000 - 150 SS1P3 SS1P4 0.50 0.53 0.40 0.45 150 15 70 www.vishay.com UNIT V/µs °C ...

Page 2

... SS1P3 & SS1P4 Vishay General Semiconductor THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5 5.0 mm copper pad areas R at the terminal of cathode band measured at the top centre of the body θJC ORDERING INFORMATION (Example) ...

Page 3

... PDD-Americas@vishay.com, PDD-Asia@vishay.com, Vishay General Semiconductor 1000 100 10 SS1P3 1 1.3 1.5 0.1 1000 100 10 SS1P4 1 1.3 1.5 0.01 Figure 9. Typical Transient Thermal Impedance 80 90 100 PDD-Europe@vishay.com SS1P3 & SS1P4 1 10 100 Reverse Voltage (V) Figure 8. Typical Junction Capacitance Junction to Ambient 0 100 t - Pulse Duration (s) www.vishay.com 3 ...

Page 4

... SS1P3 & SS1P4 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Cathode Band 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.013 (0.35) 0.004 (0.10) 0.012 (0.30) 0.000 (0.00) www.vishay.com For technical questions within your region, please contact one of the following: 4 PDD-Americas@vishay ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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