1N6479HE3/96 Vishay, 1N6479HE3/96 Datasheet
1N6479HE3/96
Specifications of 1N6479HE3/96
Related parts for 1N6479HE3/96
1N6479HE3/96 Summary of contents
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... For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement • ...
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... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum °C A instantaneous 1 °C forward voltage A Maximum DC reverse °C A current at rated 125 °C blocking voltage A Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER Maximum thermal resistance Notes (1) Thermal resistance from junction to ambient, 0.24" x 0.24" (6 6.0 mm) copper pads to each terminal (2) Thermal resistance from junction to terminal, 0.24" ...
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... Document Number: 88527 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Vishay General Semiconductor 100 10 1 1.4 1.6 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...