BYG23M-E3/TR Vishay, BYG23M-E3/TR Datasheet - Page 3
BYG23M-E3/TR
Manufacturer Part Number
BYG23M-E3/TR
Description
DIODE 1.5A 1000V 75NS DO-214AC
Manufacturer
Vishay
Specifications of BYG23M-E3/TR
Diode Type
Avalanche
Voltage - Forward (vf) (max) @ If
1.7V @ 1A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
1.5A
Current - Reverse Leakage @ Vr
5µA @ 1000V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1.5A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
30A
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1000 V
Forward Voltage Drop
1.7 V at 1 A
Recovery Time
75 ns
Forward Continuous Current
1.5 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BYG23M-E3/TR
Manufacturer:
VISHAY
Quantity:
21 000
Company:
Part Number:
BYG23M-E3/TR
Manufacturer:
VISHAY
Quantity:
10 203
Part Number:
BYG23M-E3/TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BYG23M-E3/TR3
Manufacturer:
Vishay Semiconductors
Quantity:
19 680
Part Number:
BYG23M-E3/TR3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Figure 3. Max. Reverse Power Dissipation vs. Junction Temperature
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88962
Revision: 27-Aug-07
1000
160
140
120
100
100
80
60
40
20
Figure 4. Reverse Current vs. Junction Temperature
10
0
1
25
25
V
R
50
50
= V
0.065 (1.65)
0.049 (1.25)
0.060 (1.52)
0.030 (0.76)
Junction Temperature (°C)
0.090 (2.29)
0.078 (1.98)
RRM
R
θJA
R
θJA
= 175 K/W
= 125 K/W
75
75
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
For technical questions within your region, please contact one of the following:
100
100
DO-214AC (SMA)
V
100 %
0.177 (4.50)
0.157 (3.99)
0.208 (5.28)
0.194 (4.93)
R
125
125
Cathode Band
= V
RRM
0.008 (0.203)
80 %
0 (0)
150
150
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
0.066 (1.68)
26
24
22
20
18
16
14
12
10
0.060 (1.52)
8
6
4
2
0
Figure 5. Diode Capacitance vs. Reverse Voltage
MIN.
0.1
MIN.
Vishay General Semiconductor
Mounting Pad Layout
Reverse Voltage (V)
1
(5.28) REF.
0.208
0.074 (1.88)
10
MAX.
f = 1 MHz
T
J
= 25 °C
BYG23M
www.vishay.com
100
3