ESH2C-E3/52T Vishay, ESH2C-E3/52T Datasheet - Page 3

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ESH2C-E3/52T

Manufacturer Part Number
ESH2C-E3/52T
Description
DIODE 2A 150V 25NS UF RECT SMB
Manufacturer
Vishay
Datasheet

Specifications of ESH2C-E3/52T

Voltage - Forward (vf) (max) @ If
930mV @ 2A
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
2µA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
0.93 V
Recovery Time
25 ns
Forward Continuous Current
2 A
Max Surge Current
60 A
Reverse Current Ir
2 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ESH2C-E3/52T
Manufacturer:
VISHAY
Quantity:
130 000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 84649
Revision: 27-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
20
T
J
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
T
0.4
J
Instantaneous Forward Voltage (V)
= 150 °C
40
T
J
0.6
= 175 °C
T
J
= 175 °C
0.096 (2.44)
0.084 (2.13)
T
0.077 (1.95)
0.086 (2.20)
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
J
0.060 (1.52)
0.030 (0.76)
0.8
= 150 °C
T
For technical questions within your region, please contact one of the following:
60
T
J
J
= 125 °C
= 25 °C
T
J
= 25 °C
1.0
80
DO-214AA (SMB)
1.2
0.220 (5.59)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
Cathode Band
100
1.4
0.008 (0.2)
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Mounting Pad Layout
ESH2B, ESH2C & ESH2D
Figure 5. Typical Junction Capacitance
0.220 REF.
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
(2.159 MAX.)
0.085 MAX.
1
10
10
www.vishay.com
100
100
3

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